參考文獻 |
[1] H. Shin, K. Jeon, Y. Jang, “Comparison of the Microstructural Characterizations of GaN Layers Grown on Si (111) and on Sapphire,” Journal of the Korean Physical Society, 63(8), 1621-1624(2013)
[2] J. Ross, M. Rubin, “High-quality GaN grown by reactive sputtering,” Materials. Lett, 12(4), 215-218 (1991)
[3] H. Ishikawa, K. Yamamoto, T. Egawa, T. Soga, T. Jimbo, M. Umeno, “Thermal stability of GaN on (111) Si substrate,” J. Cryst. Growth, 189, 178-182 (1998)
[4] H. W. Kim, N. H. Kim, “Preparation of GaN film on ZnO buffer layers by rf magnetron sputtering.” Applied Suface Science, 236(1), 192-197 (2004)
[5] Y. Honda, M. Okano, M. Yamaguchi, N. Sawaki, “Uniform growth of GaN on AlN templated (111)Si substrate by HVPE,” Phys. Status Solidi C, 2, 2225-2178 (2005)
[6] H. W. Kim, S. H. Shim, C. Lee,” Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering,” Recent Developments in Advance Materials and Processes, 518, 137-142 (2006)
[7] Nola Li, E. H. Park, Y. Huang, S. Wang, A. Valencia, B. Nemeth, J. Nause, I. Ferguson, “Growth of GaN on ZnO for solid state lighting applications,” SPIE, 6337, (2006)
[8] S. Tripathy, V. K. X. Lin, S. B. Dolmanan, J. P. Y. Tan, R. S. Kajen, L. K. Bera, S. L. Teo, M. K. Kumar, S. Arulkumaran, G. I. Ng, S. Vicknesh, S. Todd, W. Z. Wang, G. Q. Lo, H. Li, D. Lee, and S. Han, “AlGaN/GaN two-dimensional-electron gas heterostructures on 200mm diameter Si(111),” Appl. Phys. Lett, 101, 082110, (2012)
[9] N. Li, “GaN on ZnO: A new approach to solid state lighting,” (2009)
[10] A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, H. Fujioka, “Room temperature epitaxial growth of m -plane GaN on lattice-matched ZnO substrates” Applied Physics Letters,90(4), 041908 (2007)
[11] N. L. Barr, E. H. Park, Y. Huang, S. Wang,“Growth of GaN on ZnO for Solid State Lighting Applications” SPIE, 425, 6337, (2006)
[12] H. P. Maruska, J. J. Tietjen “The preparation and properties of vapor deposited single-crystalline GaN,” Applied Physics Letters, 15(10), 327-329 (1969)
[13] M. Wittmer, J. Noser, H. Melchior, “Oxidation kinetics of TiN thin films,” Journal of Applied Physics, 52(11), 6659-6664 (1981).
[14] R. K. Waits, “Edison’s vacuum coating patents,” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(4), 1666- 1673 (2001)
[15] V. Kouznetsov, K. Macák, J. M. Schneider, “A novel pulsed magnetron sputter technique utilizing very high target power densities,” Surface and Coatings Technology, 122(2-3), 290-293 (1999)
[16] A. P. Ehiasarian, R. New, W. D. Münz, “Influence of high power densities on the composition of pulsed magnetron plasmas." Vacuum,” 65(2), 147-154 (2002)
[17] J. Alami, “Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering,” Diss. Institutionen för fysik, kemi och biologi, 2005.
[18] K. Sarakinos, J. Alami, S. Konstantinidis, "High power pulsed magnetron sputtering: A review on scientific and engineering state of the art." Surface and Coatings Technology, 204(11), 1661-1684 (2010)
[19] H. Takikawa, H. Tanoue, "Review of cathodic arc deposition for preparing droplet-free thin films," IEEE Transactions on Plasma Science, 35(4), 992-999 (2007)
[20] S. Schmidt, Z. Czigány, G. Greczynski, J. Jensen, L. Hultman, "Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N2." Journal of Applied Physics, 112, 013305 (2012)
[21] D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, "Power supply 84 with arc handling for high peak power magnetron sputtering." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 22(4), 1415-1419 (2004)
[22] 林麗娟,「X 光繞射原理及其應用」,工業材料,86,100-109,
2000
[23] 王國強,「以反應式脈衝直流磁控濺鍍法通入 C2H2 反應氣體製備
AZO 薄膜的光電特性之研究」,國立中興大學,碩士論文
[24] C. Y. Tsai, J. D. Lai, S. W. Feng, “Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications,” Beilstein Journal of Nanotechnology, 8, 1939-1945(2017)
[25] Zhang, Haitao, Chen, Jianyuan, Cherng, Jyhshiarn , “The c-axis orientation ZnO by ICP enhanced HiPIMS at ambient temperature” , Journal of Crystal Growth, 453, 138-142 (2016)
[26] 許哲隆,「以氮化鎵為基板之表面聲波元件之研製」,國立中央大學,碩士論文
[27] 金開聖,「氧化鋅薄膜分析與發光二極體元件製作」 ,中華技術學院 , 碩士論文
[28] H. J. Ko, M. S. Han, Y. S. Park, “Improvement of the quality of ZnO substrates by annealing,” Journal of Crystal Growth, 269(2-4), 493-498 (2004).
[29] H. W. Kim, S. H. Shim, C. Lee, ”Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering,” Recent Developments in Advance Materials and Processes, 518, 137-142 (2006)
[30] J. Chen, S. M. Zhang, B. S. Chang, ”Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN,” Science in China Series E-Technological Science, 46(6), 620-626 (2003)
[31] Piotr Caban, Wlodek Strupinski, Jan Szmidt, ”Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC,” Journal of Crystal Growth, 315(1), 168-173 (2011)
[32] W. K. Wang, M. C. Jiang, ”Growth behavior of hexagonal GaN on Si(100) and Si(111) substrates prepared by pulsed laser deposition,” Japanese Journal of Applied Physics, 55(9), 095503 (2016)
[33] P. K. Song, E. Yoshida, Y. Sato, “GaN Films Deposited by DC Reactive Magnetron Sputtering,” Japanese Journal of Applied Physics, 43(2A), L164-L166 (2004)
[34] R. V. Stuart , Vacuum Technology, Thin Films, and Sputtering: An Introduction , (1983) |