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姓名 吳昇儒(Sheng-Ju Wu) 查詢紙本館藏 畢業系所 機械工程學系 論文名稱 PVT法生長單晶氮化鋁之腔體熱場數值分析
(Numerical analysis of PVT method for thermal field in AlN single crystal growth)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 氮化鋁是一種寬能隙(6.2 ev)半導體材料，氮化鋁本身擁有良好的導熱性質，廣泛運用在發光二極體材料。在氮化鋁晶體製程中，被廣大使用的方法為物理氣相傳輸(Physical Vapor Transport , PVT)，利用昇華方式，將氮化鋁粉末昇華成鋁氣體和氮氣，透過飽和蒸汽壓的壓差當作氣體的傳輸動力。為了要達到業界需求品質，氮化鋁的高品質結構至關重要，影響品質最大關鍵為生長溫度分佈。
在絕大多數實驗文獻中，均以實際生長實驗做研究，較少使用數值分析模擬作此相關研究，因此本研究利用修改長晶爐體幾何結構，包含絕熱層厚度、坩堝上蓋厚度及調整線圈位置等，來研究在這些因素對生長溫度分布的影響。
研究結果顯示，當加厚坩堝上蓋且維持進氣口之氣體空間時，晶種載台因為熱阻變大，使得熱變得更均勻且不易散失；當加厚絕緣層時，因為絕緣層熱阻較大，加厚可以使得熱更不易散失並提升整體的生長溫度；在調整線圈位置時，因感應加熱在磁通密度高區域擁有較大的熱源，而線圈中心擁有最大的磁通密度，因此可利用此方式控制實驗中需要被加熱的坩堝區域，獲得良好的生長溫度環境。摘要(英) Aluminum nitride is a wide band gap (6.2 ev) semiconductor material. Aluminum nitride is high thermal conductivity and widely used in light-emitting diode materials. In the process of aluminum nitride crystals, the Physical Vapor Transport (PVT) method is commercially used. The sublimation is used to sublimate the aluminum nitride powder into aluminum gas and nitrogen, and then it is transported by the difference of saturated vapor pressure. In order to achieve the quality required by the industry, the high-quality structure of aluminum nitride is crucial, and the most important factor affecting the quality is the growth temperature distribution.
The experiment is widely used in the previous researches, but the numerical simulation rarely used. Therefore, the crystal growth furnace including the insulation layer thickness, crucible lid thickness, and coil position, etc., is modified to study the influence of these factors on the growth temperature distribution.
The results show that when the crucible lid is thicker and the top space of the air inlet is maintained, the temperature gradient of seed becomes more uniform and difficult to dissipate because of the increased thermal resistance. When the insulation layer is thicker and high resistance, it will lead the temperature more uniform and high degree. When changing the position of the coil, the high magnetic flux position will lead a high heat source, and the center of the coil is the largest part. We can control the temperature field in the certain area of the crucible by this way.關鍵字(中) ★ 物理氣相傳輸
★ 氮化鋁
★ 感應加熱關鍵字(英) ★ Physical Vapor Transport
★ Aluminum Nitride
★ Indution heating論文目次 摘要 IV
Abstract V
致謝 VI
目錄 VII
圖目錄 IX
表目錄 XI
符號說明 XII
第一章 緒論 1
1-1 研究背景 1
1-2 氮化鋁生長方式 2
1-2-1 氣相反應過程 2
1-2-2 Source粉末昇華過程 2
1-2-3 氮化鋁在晶種表面生長過程 2
1-3 PVT加熱系統 3
1-3-1 電阻式加熱(Resistance heating) 3
1-3-2 RF感應式加熱(RF Induction heating) 3
1-4文獻回顧 4
1-5研究動機與目的 6
第二章 研究方法 14
2-1數學模型 14
2-1-1 物理系統 14
2-1-2 基本假設 14
2-1-3 統御方程式 15
2-1-4 邊界條件 16
2-2腔體材料性質參數 17
第三章 數值方法 23
3-1數值分析求解 23
3-2網格配置 23
3-3收斂公差測試 24
第四章 結果與討論 27
4-1溫度分布影響與模型驗證 27
4-2線圈位置對坩堝加熱影響 28
4-3 crucible lid厚度對生長溫度影響 29
4-4絕熱層厚度對溫度分布影響 29
第五章 結論與未來研究方向 43
5-1結論 43
5-2未來研究方向 44
參考文獻 45參考文獻 [1] C. Hartmann, J. Wollweber, C. Seitz, M. Albrecht, R. Fornari, Homoepitaxial seeding and growth of bulk AlN by sublimation, Journal of Crystal Growth 310 (2008) 930–934
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[14] M. Mastro, A. Kuramata, J. Calkins, J. Kim, F. Ren, S. Pearton, Opportunities and Future Directions for Ga2O3. ECS Journal of Solid State Science and Technology, 6 (2017) 356-359
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[16] COMSOL Multiphysics Ver. 5.5指導教授 陳志臣(Jyh-Chen Chen) 審核日期 2020-7-29 推文 plurk
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