溶液剪切力 法製備醌型噻吩並異靛藍 (DTPQ) N型小分子 半 導體於有機場效應電晶 體 應用

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游芷欣(Chih-Hsin Yu) 查詢紙本館藏

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化學工程與材料工程學系

論文名稱

溶液剪切力法製備醌型噻吩並異靛藍 (DTPQ) N型小分子半導體於有機場效應電晶體應用
(Solution-Sheared Thienoisoindigo based Quinoidal (DTPQ) N-Type Small Molecular Semiconductors for Organic Field Effect Transistor Application)

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摘要(中)

此論文以醌型為結構之 n型小分子作為有機半導體材料，利用溶液製程
中的剪切力塗布法製作出高結晶性與單一方向性之有機場效應電晶體。一
系列以噻吩並異靛藍 (thieno-isoindigo) 為核心的醌型 (quinoidal) n型小分
子 DTPQ 發展出具有直鏈 (DTPQ-10）和不同支點位置 DTPQ-b8，，-b16，，-b17）的四種材料，並對有機場效應電晶體中薄膜微結構、分子堆疊
排列和電荷傳輸之間的關係進行了系統的研究。
改變側鏈長度與支點位置對於分子堆疊、結晶性和元件性能產生的影
響，利用紫外光 -可見光光譜儀、光學顯微鏡、原子力顯微鏡和低掠角廣角
X光繞射分析。 DTPQ-b16支點距離主鏈兩個碳與較長支鏈長度，由於高結
晶性、晶粒大且分子排列具有單一方向性有利於電荷傳輸因此得到最高電
子遷移率為 2.54 cm2 V-1 s-1、電流開關也比超過 105。相反的， DTPQ-b8支
點距離主鏈兩個碳與較短支鏈長度，顯示較差溶解度不利於層層堆疊，得到
電子遷移率為 0.72 cm2 V-1 s-1。 DTPQ-b17支點距離主鏈三個碳，於薄膜形
貌上出現明顯裂痕，不利於電荷傳輸，得到電子遷移率為 0.192 cm2 V-1 s-1。
直鏈的 DTPQ-10，也有較差溶解度，且分子呈現面朝上 (face-on)的排列與較
差的薄膜形貌，得到最低電子遷移率為 0.013 cm2 V-1 s-1。同時DTPQ系列存放於控制濕度30~40%的大氣環境下超過一個月，並維持良好的空氣穩定度。

摘要(英)

A specific design for solution-sheared organic semiconductors would be an effective approach to achieve high performance of organic field effect transistor (OFET) with high crystallinity and uniaxial alignment. Based on a series of thieno-isoindigo based quinoidal n-type small molecules DTPQ with alkyl-chain lengths (DTPQ-10) and different branching positions (DTPQ-b8, -b16, -b17) were developed.
The effect of the length and branching position of alkyl chains on charge transport, molecular packing and crystallinity are investigated by UV-vis spectroscopy, atomic force microscopy (AFM), grazing incidence wide angle X-ray diffraction (GIWAXD). DTPQ-b16 with branching point at two position away the backbone with longer branch length, results in high crystallinity, larger grain size and well orientation exhibit the maximum electron mobility (μe) up to 2.54 cm2 V-1 s-1, ON/OFF ratio (ION /IOFF) over than 105. In contrast, DTPQ-b8 with branching point at two position away the backbone with shorter branch length, results in poor solubility, which is disadvantage to build the lamella stacking structure, and lead to an electron mobility of 0.72 cm2 V-1 s-1. DTPQ-b17 with branching point at third position away the backbone showed obvious crack on film morphology, which are highly disadvantage to charge transport, and an electron mobilities reaching 0.192 cm2 V-1 s-1. Last, DTPQ-10 with linear alkyl chain results in poor solubility with face-on molecular packing and bad morphology exhibit the lowest electron mobility of 0.013 cm2 V-1 s-1. Especially, these four DTPQs OFETs show excellent air stability, where the devices were stored in ambient condition (room temperature; relative humidity 30~40%) for over one month.

關鍵字(中)

★ 有機場效應電晶體

關鍵字(英)

★ OFET

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 x
一. 緒論 1
1-1 前言 1
1-2 有機場效應電晶體 3
1-3 有機小分子材料 15
1-4 分子排列 37
1-5 有機半導體溶液製程 41
1-6 研究動機 51
二. 實驗方法 53
2-1 實驗藥品 53
2-2 實驗設備與裝置 56
2-3 實驗方法 57
2-4 元件半導體層薄膜量測分析 62
三. 結果與討論 65
3-1 有機小分子材料性質分析 65
3-2 有機場效應電晶體電性分析 72
3-3 薄膜形貌 79
3-4 有機小分子半導體薄膜微結構分析 82
四. 結論與未來展望 90
參考文獻 92
附錄 98

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指導教授

劉振良(Cheng-Liang Liu)

審核日期

2020-10-12

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