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姓名	李林祥(Lin-Hsiang Lee)  查詢紙本館藏	畢業系所	光電科學與工程學系
論文名稱	二維材料二硫化鉬薄膜光電特性與均勻性之研究
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檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 (2025-12-1以後開放)
摘要(中)	二硫化鉬薄膜為具有能隙(bandgap)之二維材料，當其應用於半導體元 件具有高開關比的特性。本論文使用一階段與二階段化學氣相沉積法沉積 法沉積二硫化鉬薄膜以探討其光電特性與均勻性。一階段化學氣相沉積法 製成的二硫化鉬薄膜，拉曼光譜圖兩特徵峰值的差額(delta k)為 19.2cm-1到25.6cm-1，層數為一到六層，雙層之二硫化鉬薄膜均勻性可達到 15mm。二階段化學氣相沉積法製成的二硫化鉬薄膜，拉曼光譜圖兩特徵峰值的差額(delta k)為 20.7cm-1 到 23.6cm-1，層數為一到三層，雙層之均勻性為整片750mm2之範圍。 此外本研究也使用 X 射線光電子能譜儀，做薄膜元素分析與計算元素 百分比。使用 X 射線繞射儀，分析二硫化鉬薄膜的晶格。使用可見光光譜儀與光激發螢光光譜儀，對照文獻，分析二硫化鉬薄膜在布里淵區 k點位置的激子躍遷行為。另外本研究也放置大型的藍寶石基板，比較一階段化學氣相沉積與二階段化學氣相沉積法沉積的二硫化鉬薄膜之均勻性。一階段化學氣相沉積法沉積的二硫化鉬薄膜較容易受到爐管內因素影響，本實驗放置3 × 9cm的大型藍寶石基板，並比較不同位置的均勻性。二階段化學氣相沉積法沉積的二硫化鉬薄膜，均勻性與石英爐管腔體內基板擺放位置等因素無關，僅與濺鍍鉬薄膜均勻度有關，本實驗放置3 × 2.5cm的大型藍寶石基板，並在上面沉積出均勻的薄膜。
摘要(英)	Molybdenum disulfide (MoS2) thin film is a kind of 2D material with a proper bandgap, and high switching ratio when applied to be the device. One-step and two-step chemical vapor depositions(CVD) have been used to deposit MoS2 thin films to analyze their photonic properties and uniformity. The difference between the two characteristic peaks of the Raman spectrum by one-step CVD process is 19.2cm-1 to 25.6cm-1 , which means the films are monolayer to six layers and 15mm of uniform range is bilayer. And the difference between the two characteristic peaks of the Raman spectrum by two-step CVD process is 20.7cm1 to 23.6cm-1 , which means the films are monolayer to three layers and 750mm2 of the whole substrate is bilayer. The element composition of the films was analyzed by X-ray photoelectron spectrometer. The lattice of the films was analyzed by X-ray diffractometer. The exciton transition behavior of MoS2 thin film at the k point of the Brillouin zone was studied by using visible light spectrometer and photoluminescence spectrometer. The uniformity of the MoS2 thin film deposited by the one-step CVD method is dependent on several parameters of furnace. In this research, a 3×9cm2 sapphire substrate was placed to deposit MoS2 thin films and the uniformity of thin film was analyzed. The uniformity of the MoS2 thin film deposited by the two-step CVD method was independent on the quartz furnace. The uniformity of the MoS2 thin film was related the uniformity of the sputtered molybdenum thin film. In this research, a sapphire substrate of 3×2.5cm2 was placed, and a uniform thin film was deposited successfully.
關鍵字(中)	★ 二硫化鉬 ★ 二維材料 ★ 均勻性 ★ 光電特性 ★ 薄膜	關鍵字(英)
論文目次	目錄 摘要....................................................................................................................i Abstract ............................................................................................................ii 誌謝..................................................................................................................iii 目錄..................................................................................................................iv 圖目錄 ..............................................................................................................vi 表目錄 ............................................................................................................xiii 第一章 緒論...................................................................................................... 1 1-1 前言........................................................................................................ 1 1-2 文獻回顧................................................................................................ 2 1-3 研究動機與目的.................................................................................... 3 第二章 基礎理論.............................................................................................. 5 2-1 二硫化鉬的特性...................................................................................... 5 2-1-1 二硫化鉬的晶體結構...................................................................... 5 2-1-2 二硫化鉬的製備方式...................................................................... 6 2-1-3 二硫化鉬的光學特性.................................................................... 16 第三章 實驗架構與分析儀器介紹............................................................... 19 3-1 實驗方法 ............................................................................................... 19 3-1-1 一階段化學氣相沉積.................................................................... 19 3-1-2 二階段化學氣相沉積.................................................................... 23 3-2 實驗儀器 ............................................................................................... 26 3-2-1 離子源濺鍍沉積系統架設............................................................ 26 3-2-2 爐管系統架設 ............................................................................... 28 3-3 量測儀器 ............................................................................................... 29 3-3-1 拉曼光譜儀 ................................................................................... 29 3-3-2 X 射線繞射儀 ................................................................................ 31 3-3-3 可見光 光譜儀 ............................................................................. 33 3-3-4 X 射線光電子能譜儀..................................................................... 34 3-3-5 螢光光譜儀 ................................................................................. 35 第四章 實驗結果............................................................................................ 37 4-1 一階段製程二硫化鉬薄膜成長分析 .................................................... 37 4-1-1 調整三氧化鉬粉末克數對二硫化鉬薄膜的影響.......................... 37 4-1-2 X 射線光電子能譜儀分析調整硫粉克數對二硫化鉬薄膜的影響 ................................................................................................................. 40 4-1-3 拉曼光譜分析調整硫粉克數對二硫化鉬薄膜的影響.................. 47 4-1-4 X 射線繞射儀分析調整硫粉克數對二硫化鉬薄膜的影響 .......... 57 4-1-5 二硫化鉬薄膜的光學特性............................................................ 64 4-2 二階段製程二硫化鉬薄膜成長分析 .................................................... 75 4-2-1 調整鉬薄膜厚度對二硫化鉬薄膜的影響..................................... 75 4-2-2 調整硫化溫度對二硫化鉬薄膜的影響......................................... 78 4-2-3 調整硫化時間對二硫化鉬薄膜的影響......................................... 81 4-2-4 最佳硫化溫度的光電特性量測 .................................................... 84 4-2-5 硫化前後擺放時間對二硫化鉬薄膜的影響................................. 90 4-2-6 二階段製程薄膜均勻性探討........................................................ 93 第五章 實驗結論與未來研究 ...................................................................... 98 5-1 實驗結論........................................................................................... 98 5-2 未來研究........................................................................................... 99 參考文獻 ....................................................................................................... 100
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指導教授	陳昇暉	審核日期	2020-11-10
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