鎳矽化物奈米管結構陣列之製備及性質研究

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詹子賢(ZIH-SIAN JHAN) 查詢紙本館藏

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化學工程與材料工程學系

論文名稱

鎳矽化物奈米管結構陣列之製備及性質研究

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摘要(中)

在本研究中，我們報導一種在室溫下透過聚苯乙烯奈米球微影術結合金屬輔助催化蝕刻法與電化學蝕刻法的新穎製程技術，成功在(001)矽單晶基材上以一步驟、安全以及低成本的方式製備出大面積規則準直之矽單晶奈米管陣列結構，透過調控聚苯乙烯奈米球之尺寸與電化學蝕刻時間可以分別控制矽單晶奈米管的外徑以及長度，此外，藉由調控不同氫氟酸濃度及電流密度大小，可進一步控制矽單晶奈米管的內徑大小。接著，利用濺鍍沉積與高溫熱處理製備矽化物奈米管結構。經由 SEM、TEM 影像圖與其相對應之電子選區繞射圖譜鑑定分析可得知所製備出之矽單晶奈米管及 NiSi2 奈米管結構具有高度準直性且為單晶結構。
由於 NiSi2 奈米管的有序排列、中空結構、單晶結構及低有效功函數，具有低啟動電場的優異電子場發射特性。實驗結果呈現出令人興奮的前景，可以發現其有效功函數從 5 eV 大幅下降至 2.64 eV，啟動電場從 2.35 V μm-1 大幅提前至 1.15 V μm-1，大幅提升場發射的效應。

摘要(英)

In this work, one-dimensional silicon nanotubes are successfully fabricated on (001) silicon substrate through an innovative method combining polystyrene nanosphere lithography, anisotropic wet etching and metal assisted anodic etching processes. The novel approach demonstrates a cost-effective and simple method to fabricate the silicon nanotubes which can also be employed for broadband photodetector, solar energy and optoelectronic nanodevices.
After successfully fabricating the silicon nanotube, we deposited the Ni film on silicon nanotubes by sputtering process combining with the annealing treatment to obtain Nickel silicide nanotubes. TEM and SAED analyses indicated that all the NiSi2 nanotubes were single crystalline and their axial orientations were parallel to the [100] direction. The field emission measurement results show that Nickel silicide nanotubes have lower turn-on field of 1.15 V/μm compared to silicon nanotubes in the same height and diameter due to its lower effective work function.

關鍵字(中)

★ 鎳矽化物
★ 矽晶奈米管
★ 電子場發射
★ 電化學蝕刻

關鍵字(英)

論文目次

第一章前言及文獻回顧 1
1-1 前言 1
1-2 一維矽晶奈米結構 2
1-2-1 一維矽晶奈米線製備及應用 2
1-2-2 一維矽晶奈米管製備及應用 4
1-3 電化學蝕刻法製備一維矽晶奈米結構 6
1-3-1 準直型矽晶奈米孔洞陣列製備 6
1-3-2 規則有序之準直型一維矽晶奈米孔洞陣列製備 7
1-3-3電化學金屬催化蝕刻法製備一維矽晶奈米線陣列 8
1-4 水接觸角相關理論 9
1-5 場發射電子元件 10
1-5-1 電子場發射相關理論 10
1-5-2 一維矽晶奈米結構於電子場發射之研究 12
1-6 鎳金屬矽化物奈米結構 12
1-6-1 金屬矽化物之製程與應用 12
1-6-2 鎳金屬矽化物奈米線之製備及電子場發射應用 14
1-7 研究動機及目標 15
第二章實驗步驟及實驗設備 16
2-1 規則有序且準直排列之一維矽晶奈米線結構 16
2-1-1 矽晶基材使用前處理 16
2-1-2 奈米球陣列模板製備 17
2-1-3 蒸鍍純金薄膜 17
2-2 規則有序且尺寸可調控之矽單晶奈米尖孔洞陣列結構 17
2-3 電化學蝕刻法製備高長寬比矽單晶奈米孔洞通道陣列結構 18
2-4 規則有序且準直排列之一維矽晶奈米管結構 18
2-5 規則有序排列且準直之鎳金屬矽化物奈米管陣列結構 18
2-6 試片分析 19
2-6-1 掃描式電子顯微鏡 19
2-6-2 穿透式電子顯微鏡 19
2-6-3 影像式水滴接觸角量測儀 20
2-6-4 真空電子場發射性質量測系統 20
第三章結果與討論 22
3-1 單層自組裝奈米球模板陣列製備 22

3-2 奈米球微影術結合金屬輔助電化學蝕刻法製備矽單晶奈米線陣列 23
3-3 奈米球微影術結合濕式化學蝕刻法製備矽單晶奈米孔洞陣列 24
3-4 電化學蝕刻法製備矽單晶奈米孔洞通道陣列 25
3-5 奈米球微影術結合金屬輔助電化學蝕刻法製備矽單晶奈米管陣列 27
3-6 鎳矽化物奈米管陣列結構製備 31
3-7 水滴接觸角量測分析 33
3-7-1 矽單晶奈米線及奈米管陣列 33
3-7-2 矽化鎳奈米線及奈米管陣列 34
3-8 電子場發射性質量測分析 35
第四章結論與未來展望 38
參考文獻 39
表目錄 49
圖目錄 50

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指導教授

鄭紹良(Shao-Liang Cheng)

審核日期

2021-10-8

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