參考文獻 |
[1]W. G. Feng,” Newton-Raphson method of elastic viscoelastic finite element analysis”, M.S. Thesis,Institute of ME, National Chiao Tung University, Taiwan,Republic of China,1984.
[2]T. Z. Huang, ”Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2018.
[3]Y. C. Lai,” 1D Matrix Coefficient Verification And Semiconductor Device Simulation”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2020.
[4]P. Feldmann , R.A. Rohrer, “Proof of the number of independent Kirchhoff equations in an electrical circuit” ,AT&T Bell Lab., Murray Hill, NJ, USA, 1991.
[5]Q. Liu, S. Sutar and A. Seabaugh, “Tunnel diode/transistor differential comparator”, Troy, NY ,USA, 2005.
[6]R. L. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, Prentice Hall, ninth edition, 2005.
[7]T. W. Hsin, ”Potential-Based Modeling of Two Dimensional Workspace Using Several Source Distributions”, M. S. Thesis, Institute of ME,National Chiao Tung University,Taiwan,Republic of China,1993.
[8]P. Y. Chang, ”Development of point-added square element and its applications to 2-D semiconductor device simulation”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2016.
[9]S. Y. Li, ”Development of four-in-one regular triangle element and its applications to 2D semiconductor device simulation” Nation Central University, Taiwan, Republic of China, 2016.
[10]R. A. Jabr, M. Hamad and Y. M. Mohanna, “Newton-Raphson solution of Poisson′s equation in a pn diode”, Int. J. Electrical Eng. Educ,pp.27-29, Jan. 2007.
[11]D.A. Neamen, Semiconductor Physics and device 3^{rd}ed. McGraw-Hill Companies Inc.,New Work, 2003.
[12]T. Y. Chen,” Derivation and Verification of Electric-Field Equation in Low-high-doping Cylindrical PN Junction”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2020.
[13]Y. Y. Li,” Finding internal vector from the Taylor series in tetrahadron element for 3D semiconductor device simulation”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2019.
[14]H. Y. Chen,” Finding internal vector from the Taylor series in arbitrary triangle element for 2D semiconductor device simulation”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2019.
[15]J. Y. Wu,” 2D matrix coefficient verification and semiconductor device simulation”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2020.
[16]Y. C. Lin,” Breakdown simulation of a spherical PN junction in cylindrical coordinates”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2012.
[17]M. Marrero-Martín, J. García, B. González and A. Hernández, "Circuit models for PN integrated varactors," IEEE Trans, Palma de Mallorca, Spain, pp. 1-4, 2011.
[18]Z. A. S. and S. N. A., "Modelling of NPN Bipolar Junction Transistor Characteristics Using Gummel Plot Technique, ”IEEE Trans, Liverpool, UK, pp. 396-400, 2010. |