| 摘要(英) |
Wafer bonding technology generally require high-temperature heat
treatment or extremely smooth surface condition. However, in our recent
research, a strong bonding phenomenon between copper and silicon wafer
was discovered in a liquid-nitrogen submerged device, with aid from
external electric field. Minimum surface roughness and high-temperature
heat treatment are not required in such bonding technique.
Furthermore, if the copper-silicon interface was separated by force, a
thin layer of copper on silicon wafer can be visible to the naked eyes.
Indicate the bonding strength is stronger than the tensile stress of copper,
therefore leaving a thin layer after been split apart.
In addition, this thesis will also discuss the abnormally rapid diffusion
of positively charged copper ions in silicon crystal at -70℃. Generally,
diffusion is extremely temperature sensitive. Yet in our bonding
experiment, rapid diffusion of copper ions can be observed by SIMS. We
suggest that external electric field can provide the kinetic energy, which is
normally provided by temperature, to ions in order to surpass activation
energy. |
| 參考文獻 |
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at -70 °C by electrochemistry. Acta Materialia. 2021;204:116486.
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