氫離子佈值Si/SiO2薄膜覆蓋矽中之空位對氫擴散之效應

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姓名

吳彥廷(Yan-Ting Wu) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

氫離子佈值Si/SiO2薄膜覆蓋矽中之空位對氫擴散之效應
(The effect of the vacancy of Si/SiO2/Si implanted by hydrogen ion on hydrogen diffusion)

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摘要(中)

在半導體元件技術的發展下，受惠於未來的趨勢如5G通訊和AI人工智慧，對元件的需求持續增加，其中SOI具備高效能和低功耗的特性，其中smart cut製程是製作SOI最主流的方式。
本研究針對氫離子佈值後氫和矽晶圓的交互作用，我們使用TRIM模擬軟體模擬相同參數下離子佈值的射程分佈以及空位分佈，接著使用SIMS,TEM和拉曼光譜等儀器去檢測氫在矽晶圓裡的分佈，可以觀察到SiO2/Si界面有明顯的氫峰值出現，可以推測為界面的陷阱效應，並且在試片的TEM剖面圖中觀察到明顯的裂縫，此裂縫位置剛好坐落在損傷最高的位置。

摘要(英)

With the development of semiconductor device technology, benefit from future technological trends such as 5G communications and AI artificial intelligence, the demand for device continues to increase. Among them, SOI has the characteristics of high performance and low power consumption, and smart cut is the most mainstream way to make SOI.
This research focuses on the interaction between hydrogen and silicon wafers after hydrogen ion implantation, we use TRIM simulation software to simulate the ion range and vacancy distribution under the same parameters. Then we use SIMS, TEM and Raman spectroscopy instruments to detect the distribution of hydrogen in the silicon wafer, it can be observed that there is an obvious hydrogen peak at the SiO2/Si interface, it can be inferred as the trap effect of the interface. In addition, obvious cracks were observed in the TEM cross-section profile of sample, and the position of the crack was just at the position with the highest damage

關鍵字(中)

★ 離子佈值
★ 絕緣層上矽
★ 擴散
★ 界面陷阱

關鍵字(英)

★ Ion implantation
★ SOI
★ diffusion
★ interface trap

論文目次

摘要 ii
Abstract iii
致謝 iv
目錄 v
圖目錄 ix
表目錄 xi
第一章緒論 1
1.1研究背景 1
1.2 研究動機 1
第二章文獻回顧與原理 4
2.1 氫在矽中簡介 4
2.1.1形成能和氫在矽中的電荷態及位置 5
2.1.2 氫的負U效應(Negative U Effect) 5
2.1.2 氫在矽中的擴散 8
2.1.3 氫與雜質或缺陷的交互作用 9
2.1.4氫與施體/受體的中性化 10
2.1.5 中性化機制 11
2.2 矽與二氧化矽界面 12
2.2.1 矽的界面陷阱 12
2.3 矽-氫鍵的紅外光譜與拉曼光譜 16
2.3.1氫分子(H2)在矽中的光譜 18
2.3.2 H-B 震動模式 19
2.4 離子佈植 20
2.4.1 離子佈植技術 20
2.4.2 離子佈植基本原理 21
2.4.3 離子佈植分佈 23
2.4.4擴散原理 24
2.4.5離子佈植後的熱退火擴散 25
2.4.6 離子佈植與退火缺陷 26
2.5 SRIM(Stopping and Range of Ions in Matter)模擬 28
2.5.1 TRIM(Transport of ions in matter) 29
第三章實驗準備與研究流程 30
3.1 實驗試片準備 30
3.1.1晶圓清洗 30
3.1.2 氧化層生成 32
3.1.3 多晶矽層沉積 33
3.1.4氫離子佈植 33
3.2 高溫熱處理 34
3.4 SIMS檢測 34
3.5 鍵結檢測 35
3.6 SRIM模擬分析 35
第四章結果與討論 36
4.1 TRIM 離子佈植模擬分析 36
4.2氣泡分布與缺陷裂痕分析 39
4.3 SIMS分佈分析 43
4.4 鍵結分析 48
4.5 氫在矽的擴散影響 50
第五章結論 52
5.1 結論 52
參考文獻 54

參考文獻

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2021-6-18

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