| 摘要(英) |
Monocrystalline silicon is the main material used in the production of substrates for semiconductor devices. In order to achieve high quality silicon crystals with low defects in the manufacturing process, it is important to produce silicon crystals with low defects because defects are inevitable in the manufacturing process. In the Czochralski method (Cz) of single crystal silicon growth, intrinsic point defects are continuously recombined and generated at the melt/crystal interface, so the defects generated during the crystal growth process are controlled by changing the crystal rotation and pulling rate to achieve higher quality crystals. However, due to the time and material cost involved in the fabrication process, it is difficult to find the appropriate variables of crystal rotation and pulling rate, so numerical simulations are needed to observe the effect of changing the variables of crystal rotation and pulling rate on the interior of the crystal to find the appropriate process parameters.
In this study, CGSim software was used to simulate the growth of 8-inch single-crystal silicon by the CZ crystal method (CZ), in which the crystal height was grown to 500 mm to investigate the variation of oxygen concentration in the crystal under different crystal rotation and pulling speed, and to observe the effect of doping with oxygen and nitrogen on the distribution of point defects in the crystal, so as to understand the effect of different operating conditions on the defect density. It was found that the defect density in the crystals with reverse crystal rotation was lower than that in the crystals with isotropic crystal rotation, and the types of defects included vacancy-type defects and oxygen precipitates. |
| 參考文獻 |
[1] Voronkov, V. V. , " The mechanism of swirl defects formation in silicon. ", Journal of Crystal Growth, 1982, 59.3: 625-643.
[2] Voronkov, V. V., & Falster, " Intrinsic point defects and impurities in silicon crystal growth. ", Journal of The Electrochemical Society, 2002, 149.3: G167.
[3] Voronkov, V. V., & Falster, R. " The effect of nitrogen on void formation in Czochralski silicon crystals. " Journal of crystal growth, 2005, 273.3-4: 412-423.
[4] Kashchiev, D. , "Nucleation: Basic Theory with Applications ", 2000. Butterworth Growth Theories for Precipitation. Acta Materialia, 2008, 56.9: 2119-2132.
[5] Roksnoer, P. J.; VAN DEN BOOM, M. M. B. , "Microdefects in a non-striated distribution in floating-zone silicon crystals. ", Journal of Crystal Growth, 1981, 53.3: 563-573.
[6] K Kulkarni, Milind S.; Voronkov, Vladimir V. , "Simplified two-dimensional quantification of the grown-in microdefect distributions in Czochralski grown silicon crystals. " , Journal of The Electrochemical Society, 2005, 152.10: G781.
[7] K Kulkarni, Milind S. , "Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals. ", Journal of crystal growth, 2007, 303.2: 438-448.
[8] K Kulkarni, Milind S. ,"Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals. ", Journal of Crystal Growth, 2008, 310(2): 324-335.
[9] Liu, Xin; GAO, Bing; KAKIMOTO, Koichi. ," Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth. ", Journal of Crystal Growth, 2015, 417: 58-64.
[10] 鄧應揚，「多晶矽太陽能電池晶碇故畫生長之熱流場研究」，國立中央大學，博士班資格考計畫書，民國97年。
[11] 林明獻：「矽晶圓半導體材料技術(第五版)」，全華圖書，民國一零八年
[12] Smirnov, A. D., & Kalaev, V. V. , "Development of oxygen transport model in Czochralski growth of silicon crystals. " , Journal of Crystal Growth, 2008, 310.12: 2970-2976.
[13] Yang, Deren; QUE, Duanlin. , "Nitrogen in Czochralski silicon. ", In: 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No. 01EX443). IEEE, 2001. p. 255-260.
[14] Sinno, Talid, et al. , "On the Dynamics of the Oxidation-Induced Stacking-Fault Ring in as-grown Czochralski silicon crystals. ", Applied physics letters, 1997, 70.17: 2250-2252.
[15] K Kulkarni, Milind S. "Lateral incorporation of vacancies in Czochralski silicon crystals ". Journal of crystal growth, 2008, 310.13: 3183-3191. |
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