參考文獻 |
[1] Stephen Oliver, Optimize a Power Scheme for these Transient Times, Sep 30, 2014
[2] O Ambacher, “Growth and applications of group III-nitrides,” J. Phys. D: Appl. Phys., vol. 31, pp. 2653-2710, 1998.
[3] Y. Uemoto, D. Shibata, M. Yanagihara, H. Ishida, h. Matsuo, S. Nagai, N. Batta, M. Li, T. Ueda, T. Tanaka, and D. Ueda, "8300V blocking voltage AlGaN/GaN power HFET with thick poly-AIN passivation," IEEE IEDM Tech. Digest, pp. 861-864, 2007.
[4] K. H. Chen, B. S. Kang, H. T. Wang, T. P. Lele, F. Ren, Y. L. Wang, C. Y. Chang, S. J. Pearton, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, "c-erbB-2 sensing using AlGaN/GaN high electron mobility transistors for breast cancer detection," Appl. Phys. Lett., vol. 92, no. 19, 192103, May. 2008.
[5] F. Medjdoub, J. F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, C. Gaquiere, N. Grandjean, and E. Kohn, "Can InAIN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?," IEEE IEDM Tech. Digest, 2006.
[6] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-Face AlGaN/GaN Heterostructures," Journal of Applied Physics, Vol. 85, No. 6, pp. 3222-3233, 1999.
[7] Charu Gupta, Anshul Gupta, Anil K. Bansal and Abhisek Dixit, “Gate Topologies for Mitigation of Short Channel Effects in Highly Scaled AlGaN/GaN HEMTs”, IEEE EDSSC, 04 Dec. 2017
[8] Remziye Tülek, et al., “Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/ AlN/GaN two-dimensional electron gas heterostructures,” Journal of Applied Physics, vol. 105, no. 1, January 2009.
[9] M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, "High Electron Mobility Lattice-Matched AlInN/GaN Field-Effect Transistor Heterostructures," Applied physics letters, Vol. 89, 062106, 2006.
[10] N. Ketteniss, L. Rahimzadeh Khoshroo, M. Eickelkamp, M. Heuken, H. Kalisch, R. H Jansen and A. Vescan1, "Study on Quaternary AlInGaN/GaN HFETs Grown on Sapphire Substrates," Semiconductor Science and Technology, Vol. 25, 075013, 2010.
[11] K. Makiyama, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, Y. Niida, Y. Kamada, K. Joshin, K. Watanabe and Y. Miyamoto, "Collapse-Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz," IEEE International Electron Devices Meeting, pp. 9.1.1-9.1.4, 2015.
[12] S. Dai, Y. Zhou, Y. Zhong, K. Zhang, G. Zhu, H. Gao, Q. Sun, T. Chen, and H. Yang, "High fT AlGa(In)N/GaN HEMTs Grown on Si with a Low Gate Leakage and a High On/Off Current Ratio," IEEE Electron Device Letters, Vol. 39, No. 4, pp. 576-579, 2018.
[13] Indraneel Sanyal , En-Shuo Lin, Yu-Chen Wan, Kun-Ming Chen, Po-Tsung Tu, Po-Chun Yeh, and Jen-Inn Chyi, “AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate”, Journal of The Electron Devices Society, vol 9, pp. 130-136, 2021
[14] F. Lecourt, A. Agboton, N. Ketteniss, H. Behmenburg, N. Defrance, V. Hoel, H. Kalisch, A. Vescan, S. Member, M Heuken, and J. C. D. Jaeger, "Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT," IEEE Electron Device Letters, Vol. 34, No. 8, pp. 978-980, 2013.
[15] Ezgi Dogmus, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, Hichem Ben-Ammar, Marie-Pierre Chauvat, Pierre Ruterana, Piero Gamarra, Cédric Lacam, Maurice Tordjman, and Farid Medjdoub, “InAlGaN/GaN HEMTs at Cryogenic Temperatures,” Electronics, vol. 5, no. 4, pp. 31, Jun. 2016
[16] P. Murugapandiyan, A. Mohanbabu, V. R. Lakshmi, M. Wasim, and K. M. Sundaram, "Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications," Journal of Electronic Materials, Vol. 49, pp. 524–529, 2020.
[17] N. Kaminski, and O. Hilt, "SiC and GaN devices - wide bandgap is not all the same," IET Circuit Device & Systems, Vol. 8, Iss. 3, pp. 227-236, 2014
[18] A. Krost and A. Dadgar, "GaN-Based Devices on Si," Physica Status Solidi (a), Vol. 194, No. 2, pp. 361-375, 2002.
[19] F. M. Mohammed, L. Wang, I. Adesida, and E. Piner, "The role of barrier layer on ohmic performance of Ti/Al-based contact metallizations on AlGaN/GaN heterostructures," J. Appl. Phys., vol. 100, no. 2, 023708, Jul. 2006.
[20] J. Yun, K. Choi, K. Mathur, V. Kuryatkov, B. Borisov, G. Kipshidze, S. Nikishin, and H. Temkin, "Low-resistance ohmic contacts to digital alloys of n-AlGaN/AlN," IEEE Electron Device Letter, vol. 27, no. 1, pp. 22-24, Jan. 2006.
[21] P. M. White, and R. M. Healy, "Improved Equivalent Circuit for Determination of MESFET and HEMT Parasitic Capacitances from Coldfet Measurements," IEEE microwave and guided wave letters, Vol. 3, No. 12, pp. 453-454, 1993
[22] Jing Lu, Yan Wang, Long Ma, and Zhiping Yu, "A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs," Solid-State Electronics, Vol. 52, pp. 115-120, 2008.
[23] M. Berroth and R. Bosch, "Broad-Band Determination of the FET Small-Signal Equivalent Circuit," IEEE Transactions on Microwave Theory and Techniques, Vol. 38, No. 7, pp. 891-895, 1990.
[24] M. T. Yang, P. P. C. Ho, Y. J. Wang, T. J. Yeh, and Y. T. Chia, "Broadband Small-Signal Model and Parameter Extraction for Deep Sub-Micron Mosfets Valid up to 110 GHz," IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 369-372, 2003.
[25] G. Crupi, D. Schreurs, A. Caddemi, I. Angelov, R. Liu, M. Germain, and W. D. Raedt, "Detailed Analysis of Parasitic Loading Effects on Power Performance of GaN-on-Silicon HEMTs," Solid-State Electronics, Vol. 53, Iss. 2, pp. 185-189, 2009.
[26] Geng-Yen Lee, Po-Tsung Tu, and Jen-Inn Chy, “Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer”, Applied Physics Express, 8, 0641102, 2015
[27] M. Wang and K. J. Chen,"Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping, " IEEE Electron Device Letters, Vol. 32, No. 4, pp. 482-484, 2011.
[28] M. A. KHAN, J. N. KUZNIA, M. S. SHUR, AND Q. C. CHEN, “Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias,” Electronics Letters, vol. 30, no. 25, pp. 2175–2176, 1994.
[29] S. . BINARI, P. . KLEIN, AND T. . KAZIOR, “Trapping effects in GaN and SiC microwave FETs,” Proceedings of the IEEE, vol. 90, no. 6, pp. 1048–1058, Jun. 2002.
[30] W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse, “Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaNÕGaN heterostructure field-effect transistors”, APPLIED PHYSICS LETTERS, Vol. 80, No. 17, 2002
[31] M.Wang and K. J. Chen, "Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique," IEEE Transactions on Electron Devices, Vol. 57, No. 7, pp. 1492-1496, 2010.
[32] H. Jiang, X. Li, J. Wang, L. Zhu, H. Wang, J. Liu, M. Wang, M. Yu, W. Wu, Y. Zhou, and G. Dai, "Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown," Journal of Physics: Conference Series 864, 012023, 2017.
[33] R. Wang, P. Saunier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing, "Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance," IEEE Electron Device Letters, Vol. 31, No. 12, pp. 1383-1385, 2010.
[34] R. Wang, G. Li, J. Verma, B. S. Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing, "220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs," IEEE Electron Device Letters, Vol. 32, No. 9, pp. 1215-1217, 2011.
[35] R. Wang, G. Li, G. Karbasian, J. Guo, B. Song, Y. Yue, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. G. Xing, "Quaternary Barrier InAlGaN HEMTs With fT/fmax of 230/300 GHz," IEEE Electron Device Letters, Vol. 34, No. 3, pp. 378-380, 2013.
[36] S. D. Nsele, L. Escotte, J. G. Tartarin, and S. Piotrowicz, "Noise Characteristics of AlInN/GaN HEMTs at Microwave Frequencies," International Conference on Noise and Fluctuations, pp. 1-4, 2013.
[37] S. Arulkumaran, K. Ranjan, G. I. Ng, C. M. Manoj Kumar, S. Vicknesh, S. B. Dolmanan, and S. Tripathy, "High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate," IEEE Electron Device Letters, Vol. 35, No. 10, pp. 992-994, 2014.
[38] H. W. Then, L. A. Chow, S. Dasgupta, S. Gardner, M. Radosavljevic, V. R. Rao, S. H. Sung, G. Yang, R. S. Chau, "High-Performance Low-Leakage Enhancement-Mode High-K Dielectric GaN MOSHEMTs for Energy-Efficient, Compact Voltage Regulators and RF Power Amplifiers for Low-Power Mobile SoCs," 2015 Symposium on VLSI Technology, pp. T202-T203, 2015.
[39] C. W. Tsou, C. Y. Lin, Y. W. Lian, and S. S. H. Hsu, "101-GHz InAlN/GaN HEMTs on Silicon with High Johnson’s Figure-of-Merit," IEEE Transactions on Electron Devices, Vol. 62, No. 8, pp. 2675-2678, 2015.
[40] D. Marti, S. Tirelli, V. Teppati, L. Lugani, J. F. Carlin, M. Malinverni, N. Grandjean, and C. R. Bolognesi, "94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon with Regrown Ohmic Contacts," IEEE Electron Device Letters, Vol. 36, No. 1, pp. 17-19, 2015.
[41] F. Medjdoub, N. Herbecq, A. Linge, and M. Zegaoui, " High frequency high breakdown voltage GaN transistors," IEEE International Electron Devices Meeting, pp. 9.2.1-9.2.4, 2015.
[42] P. D. Christy, Y. Katayama, A. Wakejima, and T. Egawa, "High fT and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate," Electronics Letters, Vol. 51, No. 17, pp. 1366-1368, 2015.
[43] H. Tingting, D. Shaobo, L. Yuanjie, G. Guodong, S. Xubo, W. Yuangang, X. Peng, and F. Zhihong, "70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax >160GHz," Journal of Semiconductors, Vol. 37, No. 2, pp. 024007(1-4), 2016.
[44] J. S. Moon, R. Grabar, M. Antcliffe, H. Fung, Y. Tang, and H. Tai, "High-Speed FP GaN HEMT with f T /f MAX of 95/200 GHz," Electronics Letters, Vol. 54, Iss. 10, pp. 657-659, 2018.
[45] L. Li, K. Nomoto, M. Pan, W. Li, A. Hickman, J. Miller, K. Lee, Z. Hu, S. J. Bader, S. M. Lee, J. C. M. Hwang, D. Jena, and H. G. Xing, "GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz," IEEE Electron Device Letters, Vol. 41, No. 5, pp. 689-692, 2020.
[46] S. C. Binari, et al., "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Transactions on Electron Devices, vol. 48, pp. 465-471, 2001.
[47] R. Yeats, et al., "Gate slow transients in GaAs MESFETs—Causes, cures, and impact on circuits," Technical Digest., International Electron Devices Meeting, pp. 842–845, 1988.
[48] J. C. Huang, et al., "An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for Xand Ku-band power applications," IEEE transactions on microwave theory and techniques, vol. 41, pp. 752-759, 1993.
[49] O. Jardel, O. Jardel, F. D. Groote, T. Reveyrand, J. C. Jacquet, C. Charbonniaud, J. P. Teyssier, D. Floriot, and R. Quéré, "An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR," IEEE Transactions on Microwave Theory and Techniques, Vol. 55, No. 12, pp. 2660-2669, 2007. |