濕式法製備可撓曲銀/矽晶異質微奈米結構陣列及其自驅動光感測特性之研究

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姓名

王辰浩(Chen-Hao Wang) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

濕式法製備可撓曲銀/矽晶異質微奈米結構陣列及其自驅動光感測特性之研究

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摘要(中)

在本研究中，我們提出了一種聚苯乙烯奈米球微影術結合鹼性溶液化學蝕刻與兩步驟金屬催化無電鍍蝕刻法之製程技術，成功地在(001)矽單晶基材上製備準直之一維矽單晶奈米線/錐狀雙尺度異質陣列結構，同時進一步製備雙面粗糙化表面，並保留原先蝕刻奈米線之底部銀金屬顆粒，由光學性質量測結果顯示其在可見光至近紅外光波段(400-1600 nm)，展現出良好的寬波段光吸收特性。隨後以新穎無電鍍沉積銀奈米粒子之技術開發銀/矽蕭基接面元件，並藉由TEM影像及其對應之選區電子繞射圖譜分析結構形貌及成份鑑定，最後使用940 nm近紅外光光源照射，於零偏壓下量測其光響應度、偵測靈敏度及響應速度，並掌握元件最佳性能之製程參數，直接整合於超薄可撓曲矽單晶基材上。
套用上述之製程技術，我們成功製備出超薄可撓曲銀/矽蕭基接面光感測元件，能夠在嚴酷的彎曲條件下進行光偵測，並承受多達1000次的反覆彎曲，展現出優異的穩定性及元件可靠度，同時對於940 nm之近紅外光光源，達到139 mA/W之光響應度及快速的響應時間(τ_r= 80 μs /τ_f= 412 μs)。本研究成功開發一連串簡單快速且低成本之濕式法，能夠應用於製備各式自驅動、高光響應及優異穩定性之可撓曲薄型光感測元件，是近幾年文獻中較少被提及的。

摘要(英)

In this study, we proposed a approach based on the nanosphere lithography, alkaline solution chemical etching and two-step metal-catalyzed electroless etching to successfully fabricate vertically-aligned single crystalline silicon nanowires (SiNWs)/ Si pyramid nanostructure arrays on (001) silicon substrate. In addition to producing double-sided pyramid-textured surface, we remained the silver nanoparticles at the bottom of SiNWs after two-step etching processes. Through UV-Vis-NIR measurements can show that the double-sided structure exhibited high broadband absorption from visible to near-infrared (NIR) light range. Subsequently, we developed Ag / Si Schottky junction nanodevices by electroless deposition process and observed their morphologies by TEM and SAED analyses. The produced Ag / Si Schottky junction NIR photodetectors were able to operate at zero external bias voltage and exhibited high responsivity, sensitivity and rapid response time to 940 nm NIR light.
By combining with ultra-thin Si substrate which possessed excellent bending ability, the flexible Ag / Si Schottky junction NIR photodetectors were prepared. They not only can be applied to achieve detection of NIR light on larger curvature surface but also can endure the bending cycles up to 1000 times. Besides, the flexible Ag / Si Schottky junction NIR photodetectors can exhibit a peak responsivity of 139 mA/W and fast response speed (τ_r= 80 μs /τ_f= 412 μs) to 940 nm NIR light. In this study, we proposed a series of facile and low-cost solution-based approachs to fabricate various self-powered, high responsivity, and excellent stability flexible Si-based optoelectronic nanodevices, which is less mentioned in the literature recently.

關鍵字(中)

★ 近紅外光偵測元件
★ 可撓曲
★ 異質微奈米結構
★ 自驅動感測特性

關鍵字(英)

論文目次

第一章前言及文獻回顧 1
1-1 前言 1
1-2 矽單晶表面粗糙化結構之製備及應用 3
1-3 一維矽單晶奈米線之製備及應用 4
1-4 金屬奈米材料之特性探討 5
1-5 光感測元件 6
1-5-1 金屬與半導體之接觸理論 6
1-5-2 蕭基接面之光感測機制 8
1-6 紅外線光感測器 9
1-7 超薄型可撓曲式之矽晶感測元件 10
1-7-1 超薄型可撓曲元件之應用 10
1-7-2 超薄型可撓曲矽晶元件之製程 11
1-8 研究動機及目標 12
第二章實驗步驟及儀器設備 13
2-1 實驗步驟 13
2-1-1 矽單晶基材使用前處理 13
2-1-2超薄可撓曲矽晶基材之製備 14
2-1-3 單層自組裝奈米球陣列模板之製備 14
2-1-4 矽單晶基材表面粗糙化結構 14
2-1-5 兩步驟金屬催化無電鍍蝕刻法製備微奈米異質陣列結構 15
2-1-6 低溫無電鍍沉積銀金屬奈米粒子 15
2-1-7 濺鍍鋁金屬薄膜 15
2-1-8 光感測元件之製備 16
2-2 試片分析 16
2-2-1 掃描式電子顯微鏡 16
2-2-2 穿透式電子顯微鏡 17
2-2-3 可見光-近紅外光光譜儀 17
2-2-4 影像式水滴接觸角量測儀 18
2-2-5 近紅外光偵測系統 18
第三章結果與討論 19
3-1 大面積規則有序之矽單晶金字塔陣列結構 19
3-1-1 單層自組裝奈米球陣列模板製備 19
3-1-2 奈米球微影術結合鹼性蝕刻法製備矽單晶微米金字塔陣列結構 20
3-2 大面積隨機排列之矽單晶金字塔陣列結構 20
3-3 大面積之一維矽晶微奈米異質陣列結構 21
3-3-1一維矽晶奈米線/錐狀微奈米陣列結構之製備 21
3-3-2一維矽晶奈米線/雙面錐狀微奈米陣列結構之製備 22
3-3-3 可見光-近紅外光積分球光譜儀分析 23
3-4 矽晶近紅外光偵測元件 24
3-4-1 銀/矽晶微奈米異質結構之蕭基接面製備 24
3-4-2 銀/矽晶微奈米異質結構蕭基接面之近紅外光感測特性分析與探討 26
3-4-3 銀/雙面矽晶微奈米異質結構蕭基接面之近紅外光感測特性分析與探討 27
3-5 超薄可撓曲之矽晶近紅外光偵測元件 29
3-5-1 超薄可撓曲矽單晶基材之製備 29
3-5-2 超薄矽晶基材上製備一維矽晶奈米線/單面及雙面錐狀微奈米異質結構 30
3-5-3 可見光-近紅外光積分球光譜儀分析 31
3-5-4 超薄可撓曲銀/單面及雙面矽晶微奈米結構蕭基接面近紅外光感測特性分析探討 33
3-5-5 超薄可撓曲矽晶近紅外光偵測元件之彎曲性能分析與探討 33
3-6 矽晶近紅外光偵測元件之靈敏度、響應度以及響應時間 34
第四章結論與未來展望 37
參考文獻 38
表目錄 47
圖目錄 49

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指導教授

鄭紹良

審核日期

2022-9-29

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