博碩士論文 109226002 詳細資訊




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姓名 王晟輔(Cheng-Fu Wang)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 利用電漿輔助原子沉積法沉積奈米複合層改善塑膠基板之膜裂現象
(Inhibition of Crack on Plastic Substrate by Nanolaminates Layer Deposition During Plasma Enhanced Atomic Layer Deposition)
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摘要(中) 本論文使用電漿輔助原子沉積法沉積抗反射膜於PMMA塑膠基板,在低溫製程60ºC下使用氧氣混氬氣的氧化方式,探討HfO2、SiO2、Al2O3折射率(n)和消光係數(k)的趨勢藉此獲得最佳的製程參數,研究發現使用電漿輔助原子沉積技術在低溫60ºC下,HfO2薄膜的結晶強度會隨著ALD循環次數的增加而提高,因此在本論文研究出在HfO2薄膜中插入抑制層降低薄膜的結晶現象,經過X光繞射儀量測HfO2薄膜其結晶強度成功從2256.09下降至1.2,使用原子力顯微鏡分析薄膜表面,其薄膜粗糙度從1.25 nm下降至0.434 nm有著大幅度的改善,並透過恆溫恆濕試驗測試抗反射膜的耐久度,在溫度85 ℃與濕度85%條件下未插入抑制層的抗反射膜只維持52小時,有插入抑制層的抗反射膜,其耐久度能延長至352小時。
摘要(英) In this paper, plasma-assisted atomic layer deposition method is used to coat anti-reflection film on PMMA substrate, and the oxidation method of oxygen mixed with argon plasma is used at low temperature process 60ºC, and the refractive index (n) and extinction coefficient (k) trend to obtain the best process parameters. It is found that the crystallization of HfO2 films increases with the increase of the number of ALD cycles using the plasma-assisted atomic layer deposition technology at a low temperature of 60ºC. After inserting the inhibitory layer into the HfO2 film, the crystallization of the film was successfully reduced. The HfO2 film was analyzed by X-ray diffractometer, and the crystalline strength was successfully reduced from 2256.09 to 1.2. The surface of the film was analyzed by atomic force microscopy. The roughness of the film decreased from 1.25 nm to 0.434 nm. There has been a great improvement, and the durability of the anti-reflection film is tested through the constant temperature and humidity test. Under the test at a temperature of 85 ℃ and a humidity of 85%, the anti-reflection film only lasts for 56 hours, and the anti-reflection film with inhibitory layer is extend to about 352 hours.
關鍵字(中) ★ 原子沉積法
★ 抗反射膜
★ 塑膠基板
★ 結晶抑制
★ 奈米複合層
關鍵字(英) ★ Atomic Layer Deposition
★ antireflection coatings
★ Plastic substrate
★ Reduce the crystallization
★ nanolaminates
論文目次 目錄
中文摘要 i
Abstract ii
致謝 ii
目錄 iv
圖目錄 vi
表目錄 x
第一章 緒論 iv
1-1前言 1
1-2研究目的與動機 5
第二章 基礎理論與文獻回顧 6
2-1原子沉積技術工作原理 6
2-1-1化學氣相沉積法 6
2-1-2原子沉積法 8
2-1-3電漿輔助原子沉積系統(PEALD) 12
2-2 奈米複合層的機械特性………………………………………...14
2-3 文獻探討 22
第三章 實驗方法與使用儀器設備 30
3-1實驗方法 30
3-1-1 實驗流程 30
3-1-2 實驗步驟 31
3-2製程設備介紹與條件 35
3-3量測儀器介紹與原理 41
3-3-1落地型UV-VIS-NIR分光光譜儀 41
3-3-2橢圓偏振儀(Ellipsometer) 42
3-3-3高解析掃描穿透式電子顯微鏡(Transmission Electron Microscope, TEM) 44
3-3-4可程式恆溫恆濕機(Programmable Temp. & Humi. Chamber) 45
3-3-5原子力顯微鏡(Atomic Force Microscope, AFM) 46
3-3-6 X光繞射儀(X Ray Diffractometer, XRD) 47
3-3-7光學顯微鏡 (Optical Microscope, OM)……………….. 48
第四章 實驗結果與討論 49
4-1 單層膜之光學特性 49
4-2 HfO2之結晶抑制 57
4-3多層抗反射膜……………………………………………………61
4-3-1 抗反射膜之膜層結構與光學特性……………………….61
4-3-2 抗反射膜之環境測試…………………………………….65
第五章 結論 71
參考文獻 72
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指導教授 郭倩丞(Chien-Cheng Kuo) 審核日期 2022-8-25
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