使用離子束濺鍍系統降低EUV反射鏡鉬矽介面擴散層厚度之研究

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戴宏穎(Hong-Ying Dai) 查詢紙本館藏

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光電科學與工程學系

論文名稱

使用離子束濺鍍系統降低EUV反射鏡鉬矽介面擴散層厚度之研究
(Reducing the thickness of Molybdenum-Silicon Interdiffusion Layer of EUV Reflector by Ion Beam Sputtering System)

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至系統瀏覽論文 (2024-8-12以後開放)

摘要(中)

EUV微影蝕刻技術正朝著高產能、高良率的方向發展，然而EUV曝光機內Mo/Si反射鏡的介面擴散層厚度嚴重影響反射鏡光學品質，是產業朝向高產能的一個阻礙。然而離子束濺鍍法所鍍製的多層膜，能有效的減少介面擴散及降低各介面的粗糙度，加上此沉積技術能在多層膜生長中產生最少數量的缺陷，故這項技術開始受到大家的重視。
因此本論文使用離子束濺鍍系統，在60 ℃下調整離子束電壓及電流，首先鍍製Mo單層膜以及在Al2O3或SiO2上鍍製Si薄膜，並以橢偏儀進行量測，界定單層膜厚度。接著鍍製二週期Mo/Si多層膜，先使用XRR量測，IMD軟體擬合得出多層結構資訊，初步判斷調整各參數下多層膜的介面厚度變化趨勢，最後再透過TEM橫截面量測，探討離子束電壓及電流對微觀結構的影響，發現降低離子束電壓能夠減少介面擴散層厚度，離子束電流必須選擇折衷的數值，以獲得最佳介面表現。然而在TEM中Si材料的低電子吸收率，及Mo材料的高電子吸收率，造成TEM膜厚量測結果與XRR擬合數值有出入。AFM表面粗糙度結果顯示，離子束電壓的增強並未對多層膜的表面粗糙度有明顯變化，離子束電流的增強能夠平滑多層膜的表面，顯示吸附原子(ad atom)的通量多寡影響了多層膜的表面粗糙度趨勢。

摘要(英)

UV lithography and etching technology is developing in the direction of high productivity and high yield. However, the thickness of the interface diffusion layer of the Mo/Si mirror in the EUV lithography system seriously affects the optical quality of the mirror, which is an obstacle for the industry to move towards high productivity. However, the Mo/Si multilayers deposited by ion beam sputtering can effectively reduce the interface diffusion and reduce the roughness of each interface. In addition, this deposition technology can produce a minimum number of defects in the growth of the multilayers, so this technology has begun to attract attention.
Therefore, in this paper, the ion beam sputtering system was used to adjust the ion beam voltage and current at 60 ℃℃. First, Mo monolayer was deposited and Si thin film was deposited on Al2O3 or SiO2,and measured with ellipsometer to define the thickness of the monolayer. Next, two pairs of Mo/Si multilayers was deposited, firstly measured by XRR, and fitted with IMD software to obtain the multilayers structure information, and preliminarily judged the change trend of the interface thickness of the multilayers under the adjustment of various parameters, Finally, the effects of ion beam voltage and current on the microstructure were investigated through TEM cross-sectional measurement. It was found that decreasing the ion beam voltage can reduce the thickness of the interface diffusion layer, and the ion beam current must be selected to compromise the value to obtain the best interface performance. However, in TEM, the low electron absorptivity of Si material and the high electron absorptivity of Mo material lead to the discrepancy between the measured results of TEM film thickness and the fitting values of XRR. The AFM surface roughness results showed
iii
that the enhancement of ion beam voltage did not significantly change the surface roughness of the multilayers, and the enhancement of ion beam current could smooth the surface of the multilayers, indicating that the flux of ad atoms affected the surface roughness trend.

關鍵字(中)

★ Mo/Si多層膜反射鏡
★ 介面擴散層
★ 離子束濺鍍
★ EUV

關鍵字(英)

論文目次

中文摘要 i
Abstract ii
致謝 iv
目錄 vi
圖目錄 ix
表目錄 xiv
第一章緒論 1
1-1前言 1
1-2研究目的與動機 5
第二章基礎理論與文獻回顧 7
2-1射頻離子束濺鍍法 7
2-1-1射頻離子源基本架構及操作[11] 7
2-1-2柵極與射頻中和器 9
2-2 EUV多層膜反射鏡的特性及原理 11
2-2-1多層膜反射鏡之設計理論 11
2-2-2多層膜反射鏡之週期厚度及材料的選擇 14
2-2-3多層膜反射鏡之沉積概念及技術 18
2-3 X射線反射率 21
2-3-1 X射線全反射與臨界角[23] 21
2-3-2 X射線折射率[14] 23
2-3-3 單一介面及多介面的X射線反射率 26
2-3-4 各參數對X射線反射率之影響 28
2-4 文獻探討 32
第三章實驗方法與使用儀器設備 40
3-1實驗方法 40
3-1-1 實驗流程 40
3-1-2 實驗步驟 41
3-2實驗鍍膜系統 45
3-3量測儀器及分析軟體介紹與原理 47
3-3-1橢圓偏振儀(Ellipsometer) 47
3-3-2 X射線反射率(X-Ray Reflectivity, XRR) 48
3-3-3 IMD 50
3-3-4高解析掃描穿透式電子顯微鏡(High Resolution STEM, HRTEM) 52
3-3-5原子力顯微鏡(Atomic Force Microscope, AFM) 53
第四章實驗結果與討論 55
4-1調整Mo和Si的離子束參數之單層膜厚度分析 55
4-1-1橢圓偏振儀分析調整Mo離子束電壓及電流的單層膜厚度 55
4-1-2橢圓偏振儀分析調整Si離子束電壓及電流的單層膜厚度 62
4-2 調整Mo離子束參數之Mo/Si多層膜分析 69
4-2-1分析調整Mo離子束電壓對多層膜介面的影響 69
4-2-2分析調整Mo離子束電流對多層膜介面的影響 75
4-2-3分析調整Mo離子束電壓電流對多層膜表面粗糙度的影響 80
4-3 調整Si離子束參數之Mo/Si多層膜分析 82
4-3-1分析調整Si離子束電壓對多層膜介面的影響 82
4-3-2分析調整Si離子束電流對多層膜介面的影響 91
4-3-3分析調整Si離子束電壓及電流對多層膜表面粗糙度的影響 101
第五章結論 103
參考文獻 105

參考文獻

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指導教授

郭倩丞(Chien-Cheng Kuo)

審核日期

2022-8-30

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