超強耦合有機複合式垂直發光電晶體

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姓名

鄭宥晨(You-Chen Zheng) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

超強耦合有機複合式垂直發光電晶體
(Ultra-Strong Coupling Organic Integrated Vertical Light-Emitting Transistor)

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至系統瀏覽論文 (2027-8-30以後開放)

摘要(中)

本論文主要研究利用phenyl-substituted poly(p-phenylene vinylene), Ph-PPV)又稱Super Yellow來製作超強耦合垂直有機發光電晶體(Vertical Organic Light-Emitting Transistor, VOLET)並研究其物理現象。理論上，當光子與材料激發態(激子)在共振腔中進行強耦合作用，則產生偏極子(polariton)混成態和不同的能量色散分支，而拉比分裂為上下支色散曲線的最小能量差，當拉比分裂超過激子能量的20 %以上則為超強耦合狀態。
在元件製作上，我們以共振腔式倒置型高分子垂直發光電晶體的架構設計元件，依序以厚銀膜當作及閘極及下反射鏡，接著利用原子層沉積(ALD)沉積三氧化二鋁及氧化鉿作為高介電係數介電層，N型材料氧化鋅作為半導體層，其上再堆疊OLED，而OLED陽極為薄銀，作為垂直電晶體汲極及共振腔上反射鏡。
最終實驗得出偏極子電晶體的外部量子效率為1.6 %，最高亮度為1200 cd/m2，而發光集中於偏極子下支低角度，並證實拉比分裂為720 meV(耦合強度為25.8 %)的超強耦合垂直發光電晶體元件。

摘要(英)

This thesis explore phenyl-substituted poly(p-phenylene vinylene), (Ph-PPV), or called Super Yellow, as the emissive layer of ultra-strongly coupled vertical organic light-emitting transistor (VOLET) and studies the physics phenomena. In theory, strong coupling of exciton and photon in the cavity would form hybrid polariton states and different energy dispersions of upper (UPB) and lower (LPB) polariton branches. The minimum energy difference between two branches is called Rabi-splitting energy. The ultra-strong coupling regime is reached when the Rabi-splitting energy exceeds 20 % of exciton energy,.
In the device fabrication, we design the microcavity of an inverted vertical light-emitting transistor, a thick silver film is used as the gate and bottom mirror. The atomic layer deposition (ALD) is employed to deposit the aluminum oxide and hafnium oxide as a double dielectric layer with high dielectric constant and N-type ZnO as the transistor channel. Finally, an inverted OLED is deposited on the ZnO layer, and a thin silver film is used as the drain and top mirror.
Finally, we demonstrate the polartion transistor with the external quantum efficiency of 1.5 %, and luminance of 2600 cd/m2. The emission is generated from the lower polariton branch at low angles, and the Rabi-splitting energy of 720 meV (coupling ratio of 25.8 %) demonstrates the ultrastrong coupling operation.

關鍵字(中)

★ 發光電晶體
★ 超強耦合
★ 偏極子元件

關鍵字(英)

★ Light-Emitting Transistor
★ Polariton

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 x
第一章緒論 1
1-1前言 1
1-2有機薄膜電晶體 2
1-3垂直式電晶體 3
1-4有機發光二極體 8
1-5有機偏極子元件 9
1-6研究動機與目的 11
第二章基本原理 12
2-1垂直式有機電晶體工作原理 12
2-1-1垂直電晶體-轉換特性曲線與開/關電流比 17
2-2有機發光二極體工作原理 19
2-2-1有機發光二極體結構 19
2-2-2量子效率(Quantum Efficiency) 20
2-3 耦合理論 21
2-3-1微共振腔的光子模態 22
2-3-2光子與激子的耦合 24
第三章實驗方法與架構 29
3-1 實驗材料介紹 29
3-1-1 介電層材料 30
3-1-2 半導體層材料 32
3-1-3 有機發光層材料 33
3-1-4 金屬材料 34
3-2 實驗儀器 35
3-2-1 手套箱(Glove Box) 35
3-2-2 熱蒸鍍機(Thermal Evaporation Coater) 36
3-2-3 原子層沉積(Atomic Layer Deposition, ALD) 37
3-2-4 外光臭氧清潔機(UV-Ozone) 38
3-2-5 手動式光罩接合對準器(Mask and Bond Aligner, MA6) 39
3-2-6 阻抗分析儀(LF Impedance Analyzer) 40
3-2-8 旋轉塗佈機(Spin Coater) 40
3-2-9 半導體參數分析儀(Semiconductor Parameter Analyzer, SPA) 41
3-2-10光電二極體(Photodiode) 42
3-2-11光纖旋轉平台系統 43
3-3垂直發光電晶體實驗方法及製程 44
第四章結果與討論 50
4-1光學薄膜設計 50
4-2 有機發光二極體 52
4-2-1發光二極體注入 53
4-3 氧化鋅電晶體 55
4-3-1 氧化鋅橫向電晶體 55
4-3-2 氧化鋅垂直電晶體 57
4-3-3 超強耦合有機垂直發光電晶體 58
第五章結論與未來展望 65
參考文獻 66

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指導教授

張瑞芬

審核日期

2022-8-30

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