氮電漿處理對單層二硫化鉬的影響

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林竑愷(Alexander HongKai Lin) 查詢紙本館藏

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材料科學與工程研究所

論文名稱

氮電漿處理對單層二硫化鉬的影響
(Effect of N2 plasma treatments on monolayer MoS2)

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至系統瀏覽論文 (2027-7-1以後開放)

摘要(中)

由於導帶附近的強費米能階釘紮效應(Fermi level pinning)，二硫化鉬(MoS2)顯示出 n型導電特性。缺乏有效的 p型摻雜阻礙了基於 p-n接面的元件應用，例如光電二極管、發光元件。過去已經提出了幾種方法來實現二硫化鉬(MoS2)中的摻雜，例如化學氣相沉積(CVD)替代摻雜、通過分子化學吸附/物理吸附或沉積薄膜的電荷轉移(charge transfer)摻雜和利用電漿的原子替代摻雜。在這些方法中，利用電漿的原子替代摻雜具有區域選擇性的優點。氮電漿的原子替代摻雜可以對二硫化鉬(MoS2)造成氮摻雜，並作為 p 型摻雜劑，但是對於單層二硫化鉬(MoS2)的氮電漿處理的相關研究進展甚微。
本篇論文利用電感耦合電漿(inductively coupled plasma)系統來進行氮電漿處理，探討不同製程參數對單層二硫化鉬(MoS2)薄膜的影響，其參數包含功率、時間、治具溫度、工作壓力及電漿源到樣品表面的距離。通過使用拉曼光譜(Raman spectroscopy)評估原始和氮摻雜的單層MoS2薄膜。在最佳條件下，A1g峰藍移約1.87 cm-1，I(E12g)/ I(A1g)的比值相對於原始的MoS2降低了約48%。與X射線光電子能譜(X-ray photoelectron spectroscopy)結果符合，紫外光電子能譜(ultraviolet photoelectron spectroscopy)研究表明，共價氮摻雜後，價帶最大值(VBM)向費米能量(Fermi energy)附近移動。

摘要(英)

MoS2 show n-type conduction characteristics due to strong Fermi level pinning near the conduction band. The lack of effective p-type doping hinders the device applications based on p–n junction such as photodiodes and light-emitting devices. Several approaches have been proposed to achieve doping in MoS2, such as substitutional chemical vapor deposition (CVD) doping, charge transfer doping via molecular chemisorption/physisorption and plasma doping. Among all these methods, plasma doping has the advantage of area-selectivity. Substitutional doping of nitrogen plasma can cause nitrogen doping of molybdenum disulfide (MoS2) and act as a p-type dopant. However, little progress has been made in nitrogen plasma treatment of monolayer molybdenum disulfide (MoS2).
In this study, inductively coupled plasma system was used to investigate the effect of N2 plasma treatments on monolayer MoS2. The effects of different N2 plasma treatment parameters on monolayer MoS2 were studied to optimize the covalent nitrogen doping conditions. The parameters included power, time, sample temperature, working pressure and the distance from the plasma source to the sample surface. The pristine and nitrogen-doped monolayer MoS2 films are evaluated by using Raman spectroscopy. Under optimal condition, the A1g peak blue shifted by about 1.87 cm-1, the E12g peak intensity to A1g peak intensity ratio decreased by about 48% with respect to the pristine MoS2. In accordance with the X-ray photoelectron spectroscopy results, the ultraviolet photoelectron spectroscopy investigation shows that the valence band maximum shifts closer to the Fermi energy after covalent nitrogen doping.

關鍵字(中)

★ 二硫化鉬
★ 氮電漿處理

關鍵字(英)

★ MoS2
★ N2 plasma treatments

論文目次

目錄
摘要 I
Abstract II
致謝 III
圖目錄 VI
表目錄 IX
第一章緒論 1
1-1研究背景 1
1-2研究動機 1
第二章基礎理論及文獻回顧 3
2-1過渡金屬二硫族化物介紹 3
2-1-1過渡金屬二硫族化物之晶型結構與電子結構 3
2-1-2過渡金屬二硫族化物合成發展概況 6
2-1-3過渡金屬二硫族化物電晶體發展 9
2-2二硫化鉬(MoS2)摻雜方法回顧 12
2-2-1 In-Situ化學氣相沉積(CVD)替代摻雜 12
2-2-2電漿摻雜 13
2-2-3電荷轉移摻雜 18
第三章研究方法 23
3-1實驗架構 23
3-2實驗材料與設備 24
3-3實驗步驟 24
第四章結果與討論 26
4-1 MoS2之氮摻雜製程參數探討 26
4-1-1不同功率下之氮電漿處理 26
4-1-2樣品與RF電漿源之間的距離不同之氮電漿處理 29
4-1-3不同治具溫度之氮電漿處理 31
4-1-4不同工作壓力之氮電漿處理 34
4-2單層MoS2的氮摻雜效應 37
4-2-1 X射線光電子能譜(XPS)和紫外光電子能譜(UPS)分析 37
4-2-2 理論能隙值計算與能帶圖 42
第五章結論 45
參考文獻 46

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指導教授

陳一塵(I-Chen Chen)

審核日期

2022-9-1

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