參考文獻 |
References
[1] W. E. Spear and P. G. LeComber, “Substitutional Doping of Amorphous Silicon,” Solid State Commun. 17, pp.1193, 1975
[2] D. E. Carlson and C. R. Wronski, Appl. Phys. Lett. 28, pp.671, 1976
[3] N.F. Mott and E. A. Davis, “ Electronic Processes in Non-Crystalline Materials,” 2nd ed., Chap. 6, Oxford University Press, pp. 288, 1979.
[4] J.I. Pankove and D.E. Carlson, “ Electroluminescence in Amorphous Silicon, ” Appl. Phys. Lett., Vol.29, pp.620, 1976.
[5] T.S. Nashashibi, I.G. Austin, T.M. Searle, and R.A. Gibson et al., Phil. Mag., Vol. B45, pp.553, 1982.
[6] A.J. Rhodes, P.K. Bhat, I.G. Austin, T.M. Searle, and R.A. Gibson, J. Non-Cryst. Solids., Vol.59 and 60, pp.365, 1983.
[7] D. Kruangam, T. Endo, W. Guang-Pu, H. Okaamoto, and Y. Hamakawa, “ Visible-Light Injection-Electroluminescent a-SiC:H p-i-n Diode,” Jpn. J. Appl. Phys., Vol. 24, No. 10, pp. L806-L808, 1985.
[8] D. Kruangam, T. Endo, M. Deguchi, W. Guang-Pu, H. Okamoto, and Y. Hamakawa “ Amorphous Silicon-Carbide Thin-Film Light Emitting Diode,” Optoelectronics Devices and Technologies, Vol. 1, No. 1, pp. 67-84, 1986.
[9] D. Kruangam, M. Deguchi, T. Toyama, H. Okamoto, and Y. Hamakawa, “ Carrier Injection Mechanism in a-SiC:H p-i-n Junction Thin-Film LED,” IEEE Trans. Electron Devices, Vol. 35, No. 7, pp.957, 1988.
[10] S.M. Paasche, T. Toyama, H. Okamoto, and Y. Hamakawa, “Amorphous- SiC Thin Film p-i-n Light-Emitting Diode Using Amorphous-SiN Hot- Carrier Tunneling Injection Layers,” IEEE Trans. Electron Devices, Vol. 36, No.12, pp. 2895, 1989.
[11] T.C. Chung, “Optoelectronical Characteristics of Green-Blue-White a- SiN:H-based p-i-n Thin-Film Light-Emitting Diodes,” M.S. Thesis, NCU, Taiwan, R.O.C., 1998.
[12] M.L. Hsu, “Thin-Film LED and Thin-Film Transistor Fabricated by Using a PECVD System with a Mesh,” M.S. Thesis, NCU, Taiwan, R.O.C., 1999.
[13] Arno Kraft, Andrew C. Grimsdale, and Andrew B. Holmes, “Electroluminescent Conjugated Polymers─Seeing Polymers in a New Light,” Angew. Chem. Int. Ed. 1998, 37, pp 402-428.
[14] J.H. Burroughes, D.D.C. Bradley, A.R. Brown, R.N. Marks, K. MacKay, R.H. Friend, P.L. Burn, and A.B. Holmes, “Light-Emitting Diodes Based on Conjugated Polymers,” Nature, 1990, 347, pp 539-541.
[15] C.Z. Wu, “Organic Thin-Film Light-Emitting Diodes─Techniques and Application in Flat-Display,” Electronics Information, 1996, vol.4, no.2, pp 4-12.
[16] C.C. Wu, S.D. Thesis, G. Gu, M.H. Lu, J.C. Sturm, S. Wagner, and S.R. Forrest, “Integration of Organic LED’s and Amorphous Si TFT’s onto Flexible and Lightweight Metal Foil Substrates,” Electron Device Letters, 1997, vol.18, no.12, pp 609-612.
[17] J.C. Wang, “ Improving the Characteristics of Amorphous Metal- Semiconductor-Metal Photodetectors (MSM-PDs),” M.S. Thesis, NCU, Taiwan, R.O.C., 1996.
[18] J. Y. Chen, “ The Effect of Graded-Gap and Barrier Layer Structure on the Electroluminescence Properties of a-SiC:H p-i-n Thin-Film Light Emitting Diode,” M.S. Thesis, NCU, Taiwan, R.O.C., 1992.
[19] J. K. Chen, “ Characteristics of a-SiC:H Double Composition-Dopant- Graded Gap p-i-n Thin-Film Light-Emitting Diodes,” M.S. Thesis, NCU, Taiwan, R.O.C., 1995.
[20] Wirote Boonkosuum, Dusit Kruangam, and Somsak Panykeow, “Visible- Light Amorphous Silicon-Nitride Thin-Film Light Emitting Diode,” Mat. Res. Coc. Symp. Proc. Vol.297, pp. 1005-1010.
[21] H. Iida, N. Shiba, T. Mishuku, and H. Karasaw, “Relationship between Average Grain Size on Surface of SnO2 Transparent Conductive Film and Conversion Efficiency of Amorphous Si:H Solar Cell,” IEEE Electron Device Lett., Vol. 4, pp. 157-159, 1983.
[22] Yen-Ann Chen, Chen-Fu Chiou, Wen-Chin Tsay, Li-Hong Laih, Jyh-Wong Hong, and Chun-Yen Chang ” Optoelectronic Characteristics of a-SiC:H- Based P-I-N Thin-Film Light-Emitting Diodes with Low-Resistance and High-Reflectance N+-a-SiCGe:H Layer,” IEEE Trans. on Electronic Devices, Vol.44, No.9, pp.1360-1366 , 1997
[23] M. S. Haque, H. A. Naseem, W. D. Brown, and S. S. Ang, “ Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperatures, “ Mat. Res. Soc. Symp. Proc., Vol. 258, pp. 1037-1042, 1992.
[24] J. Tanc, Amorphous and Liquid Semiconductors, chap. 5, Plenum Press, pp. 175, 1974.
[25] M.A. Lampert and P. Mark, “Current Injection in Solids,” Academic Press, 1970.
[26] D. Kruangam, M. Deguchi, T. Toyama, H. Okamoto, and Y. Hamakawa,” Carrier Injection Mechanism in a-SiC:H p-i-n Junction Thin-Film LED,” IEEE Trans. Electron Devices, Vol. 35, No. 7, pp. 957, 1988.
[27] Y. Yang, and A.J. Hegger, “Carrier Injection into Semiconducting polymers: Fowler-Nordheim Field-Emission Tunneling,” Appl. Phys. Lett., 64, 1994, pp.1245.
[28] S. Karg, J.C. Scott, J.R. Salem, and M. Angelopoulos, “Increased Brightness and Lifetime of Polymer Light-Emitting Diodes with Polyaniline Anodes,” Synthetic Metals, 80, 1996, pp.111-117.
[29] D. Kruangam, T. Toyama, Y. Hattori, M. Deguchi, H. Okamoto and Y. Hamakawa, “ Improvement of Carrier Injection Efficiency in a-SiC:H p-i-n LED Using Highly-Conductive Wide-gap p, n type a-SiC Prepared by ECR CVD,” J. Non-Cryst. Solids, Vols. 97?, pp. 293-296, 1987. |