摘要(英) |
The purpose of the study is to use C language to establish a three-dimensional tetra-hedral mesh structure with the concepts of tetrahedron method and center of gravity model. And also we establish a three-dimensional tetrahedral equivalent circuit model with the poisson equation, the electrons and holes continuity equa-tions.Furthermore, we construct hemispherical sphere and hemispherical spherical shell mesh structure. Finally complete the simulation of semiconductor components by Newton – Raphson method. During the simulation, we show how to establish the equivalent circuit model in 3D space with the tetrahedral mesh structure correctly. In addition to the establishment of triangular prism, hexahedron and other meshes, we also use the gravity-center method to establish the spherical semiconductor model. This is because the gravity-center method has the characteristic of shape freedom. And we simulate its potential and current-voltage characteristic curves, the simula-tion results are also in line with our expectations, proving the semi-spherical grid structure semiconductor device simulation is successfully established. |
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