| 摘要(英) |
This thesis is mainly about the electrical simulation of semiconductor components by using C language program of spherical mesh structure. The unit of the model is based on tetrahedron. First, we use tetrahedron to construct basic hexahedral components, and then the model of the spherical shell, since the tetrahedron is the smallest unit in the three-dimensional model, it has the highest flexibility when
composing other models. The theoretical part uses the finite element method and the center of gravity method to construct the tetrahedron. We use Poisson’s Equation, Electron
continuity equation, and Hole continuity equation to simulate the diffusion, drift, generation, recombination, and other characteristics of semiconductor components. In the computing architecture part, we use Newton-Raphson′s method to perform calculations, and developed a model architecture that can simulate the characteristics of semiconductor components. In the results part, we simulated the series resistance、diode、MOS capacitance composed of hexahedrons, spherical resistance and the spherical shell diode composed of tetrahedra. The results are also in line with our expectations, and we can confirm that our simulation is feasible. |
| 參考文獻 |
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