| 參考文獻 |
[1] Fresina, M.T.; Hartmann, Q.J.; Thomas, S.; Ahmari, D.A.; Caruth, D.; Feng, M.; Stillman, G.E. “InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication” Electron Device Meeting, pp. 207-210, 1996.
[2] N.Matine, M.W. Dvorak, C.R. Bolognesi, X. Xu, J.Hu, S.P. Watkins and M.L.W. Thewalt “Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons” Electronics Letters , Vol. 34, pp1700-172, August 1998.
[3] Yue-Fei Yang, Chung-Chi Hsu, Edward S. Yang, Hai-Jiang Ou “A High-Frequency GaInP/GaAs Heterojunction Bipolar Transistror with Reduced Base-Collector Capacitance Using a Selective Buried Sub-Collector” IEEE Electron Device Letters, Vol. 17, NO.11, pp 531-533, Nov. 1996.
[4] W.L.Chen, H.F. Chau, M. Tutt, M. C. Ho, T. S. Kim, T. Henderson “High-Speed InGaP/GaAs HBT’s Using a Simple Collector Undercut Technique to Reduce Base-Collector Capacitance” IEEE Electron Device Letters, Vol.18, NO.7, pp 355-357, July 1997.
[5] Hyunchol Shin, Christoph Gaessler, Helmut Leier “Reduction of Base-Collector Capacitance in InP/InGaAs HBT’s Using a Novel Double Polyimide Planarization Process” IEEE Electorn Device Letters, Vol.19, NO.8, pp. 297-299, August 1998.
[6] Yoram Betser, Dan Ritter “Reduction of the Base-Collector Capacitance in InP/GaInAs Heterojunction Bipolar Transistors Due to Electron Velocity Modulation” IEEE Trans. Electron Devices, Vol. 46, NO. 4, pp. 628-633, April 1999.
[7] Beng-Chye Lye, P. A. Houston, Ho-Kwang Yow, C. C. Button “GaInP/AlGaAs/GaInP Double Heterojunction Bipolar Transistors with Zero Conduction Band Spike at the Collector” IEEE Trans. Electron Devices, Vol. 45, NO. 12, pp. 2417-2421, Dec. 1998.
[8] Nicola Bovolon, Rüdiger Schultheis, Jan-Erik Müller, Peter Zwicknagl, Enrico Zanoni “Theoretical and Experimental Investigation of the Collector-Emitter Offset Voltage of AlGaAs/GaAs Heterojunction Bipolar Transistors” IEEE Trans. Electron Devices, Vol. 46, NO.4, pp. 622-627, April 1999.
[9] Y.M. Hsin, P.M. Asbeck “Experimental I-V Characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with Thin Base” Solid-State Electronics, V4-4/3, pp. 1-6, Dec. 1999.
[10] Osaake Nakajima, Koichi Nagata, Hiroshi Ito, Tadao Ishibashi, Takayuki, Sugeta “Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors” JAP. Vol. 24, NO.8, pp. L596-L598 August, 1985.
[11] Y. F. Yang, C. C. Hsu, E. S. Yang “Surface Recombination Current in InGaP/ GaAs Heterostructure-Emitter Bipolar Transistors” IEEE Trans. Electron Devices, Vol. 41, No. 5, pp. 643-647, May 1994.
[12] David R. Pehlke, Dimitris Pavlidis “Evaluation of the Factors Determining HBT High-Frequency Performance by Direct Analysis of S-Parameter Data” IEEE Trans. Microwave Theory and Techniques, Vol. 40, NO. 12, pp. 2367-2373, Dec. 1992.
[13] Liou, J.J. “Reliability of AlGaAs/GaAs heterojunction bipolar transistors: an overview” IEEE Device, Circuit and System, pp. 14-21, 1998.
[14] Bashar, S.A.; Amin, F.A.; Rezazadeh, A.A.; Crouch, M.A. “Characteristics of AlGaAs/GaAs and InGaP/GaAs HBTs at high temperature” EDMO, pp. 126-131, 1996.
[15] Bahl, S.R.; Camnitz, L.H.; Houng, D.; Mierzwinski, M.; Turner, J.; Lefforge, G. “Reliability investigation of InGaP/GaAs heterojunction bipolar transistors” Electron Device Meeting, pp. 815-818, 1995 |
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit