n79頻段之氮化鎵連續F類功率放大器暨Ka頻帶之反F類砷化鎵功率放大器之研製

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姓名

王浩恩(Hao-En Wang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

n79頻段之氮化鎵連續F類功率放大器暨Ka頻帶之反F類砷化鎵功率放大器之研製
(Implementations on n79 Band GaN Continuous Class F Power Amplifier and Ka Band GaAs Inverse Class-F Power Amplifier)

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摘要(中)

本論文使用穩懋半導體公司(WINTM)所提供之0.25-µm GaN/SiC 製程以及0.15-µm InGaAs pHEMT 製程，分別進行n79頻段之連續F類功率放大器以及Ka頻帶之反F類功率放大器之設計。
第二章提出n79頻段之氮化鎵連續F類功率放大器，從挑選偏壓直流的方式，改善AM-AM與AM-PM的線性度，來緩解氮化鎵的軟性增益壓縮(soft gain compression)特性，輸出匹配電路利用連續F類技術的方式，達成基頻、二次諧波與三次諧波的匹配，來達到寬頻且高效率之功率放大器。量測結果顯示最佳傳輸增益為22.3 dB，3-dB頻寬為3.9 - 5.0 GHz，飽和輸出功率為 38.4 dBm，功率附加效率最高可達 40.7 %，晶片面積為4.75 (2.73 × 1.74) mm2。
第三章提出 Ka 頻帶之反F類砷化鎵功率放大器，透過級間匹配，擴展頻寬，達到較寬的頻寬，輸出匹配電路採用反F類架構，達到寬頻且高效率之功率放大器。量測結果顯示最佳功率增益為13.5 dB，3-dB頻寬為23.1 - 31.5 GHz，飽和輸出功率為 26.5 dBm，功率附加效率最高可達 33.3 %，晶片面積為0.98 (1.32 × 0.74) mm2。

摘要(英)

The thesis developed two power amplifiers that were designed in WINTM 0.25-µm GaN/SiC, and 0.15-µm GaAs processes. The first design is a continuous Class-F mode power amplifier for n79 band operation in GaN/SiC process and the second one is an inverse Class-F mode power amplifier for Ka Band operation in 0.15 m GaAs pHEMT process.
Chapter 2 presents a continuous Class-F mode power amplifier for n79 band in GaN/SiC process. By selecting proper quiescent bias current, the nonlinearities, such as AM-AM and AM-PM distortions, can significantly be reduced. The amplifier achieved high efficiency and broadband performances by using continuous Class-F mode output matching network which is matched for the fundamental, second harmonic, and third harmonic impedances. The measurement results achieved a peak power gain of 22.3 dB, a 3-dB bandwidth from 3.9 to 5.0 GHz, a saturated output power of 38.4 dBm, and a peak power added efficiency up to 40.7 %. The chip area is 4.75 (2.73 × 1.74) mm2.

關鍵字(中)

★ 氮化鎵
★ 砷化鎵
★ 連續F類功率放大器

關鍵字(英)

論文目次

摘要 iii
Abstract iv
目錄 vii
圖目錄 viii
表目錄 x
第一章緒論 1
1-1 研究動機 1
1-2 研究成果 2
1-3 章節簡介 2
第二章 N79頻段之氮化鎵連續F類功率放大器 3
2-1 氮化鎵功率放大器研究現況 3
2-2 連續F類模式技術介紹 4
2-3 n79 頻段之氮化鎵連續F類功率放大器 7
2-3-1 電路圖 7
2-3-2 電晶體特性評估 8
2-3-3 連續F類匹配網路 12
2-3-4 輸出匹配設計 14
2-3-5 電路模擬與量測結果 19
2-3-6 結果比較與討論 25
第三章 Ka頻帶之反F類砷化鎵功率放大器 27
3-1 毫米波功率放大器研究現況 27
3-2 Ka頻帶之反F類砷化鎵功率放大器設計 28
3-2-1 電路圖 28
3-2-2 電晶體特性評估 29
3-2-3 輸出匹配網路設計 32
3-2-4 電路模擬與量測結果 37
3-2-5 結果比較與討論 49
第四章結論 53
4-1 總結 53
4-2 未來方向 53
參考文獻 54

參考文獻

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指導教授

邱煥凱(Hwann-Kaeo Chiou)

審核日期

2022-8-27

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