摘要(英) |
With the rise of electric vehicles, 5G and new semiconductor industries, the third-generation semiconductors have gradually become a new focus in the market. Among them, SiC has excellent thermal conductivity, high electron drift velocity, high disruptive filed intensity and chemical stability. It has become one of the most critical materials in the next generation of high-frequency, high-power semiconductor components. However, due to its high hardness and high chemical inertness, silicon carbide is one of the most difficult materials to process. How to effectively obtain a smooth and no damage SiC surface is still a big technical bottleneck for commercial SiC wafer fabrication. The main goal of this thesis is to replace the traditional diamond wire saw cutting with wire electrical discharge cutting on non-conductive semi SiC in kerosene. The non-contact method can control the cutting surface roughness better. The work piece is thermally melted by electrical discharge energy, and a thinner-diameter wire can be used to control the cutting kerf. The material is processed in this way, in order to reduce the material loss during cutting. |
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