| 摘要(英) |
We aim to fabricate Josephson Parametric Amplifier (JPA) using a single lithography process, with a focus on achieving successful Josephson junctions(JJ) as the primary objective. We propose three key steps to confirm the parameters: evaporation, exposure method, and oxidation control. For evaporation, we utilize an electron beam system and analyze the stability of aluminum thin films deposited by this system. The exposure method is photolithography the line width limit is 2 μm to 3 μm. we use cross-type evaporation to verify the photoresist thickness(3.3 μm), and the experimental results show that the JJ has complete overlap. In terms of oxidation conditions, we employ either dynamic or static oxidation to create the insulating layer of JJ. The results showed that at an oxygen pressure of 20mtorr, the junction resistance not obviously varied depending on the area, and the results of Ro are not consistent. As the new test is currently in progress, once the oxidation conditions are determined, in conjunction with the stability of the evaporation film, we can proceed with confidence in producing controllable JJ. The multiple JPAs have been fabricated on the oxidation test wafer, and measurements are currently underway. In addition, to prepare for future advanced JPA fabrication processes, we have explored and tested the fundamental principles of ion milling technology and proposed its potential application in the process. This will contribute to further research and development of advanced JPA.
This research is funded by the Taiwan Quantum Program, a forward-looking technology development project of the National Science and Technology Commission. |
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