氧電漿表面處理對感光性介電材料與金屬薄膜界面附著力之影響

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張博凱(Po-Kai, Chang) 查詢紙本館藏

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化學工程與材料工程學系

論文名稱

氧電漿表面處理對感光性介電材料與金屬薄膜界面附著力之影響

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至系統瀏覽論文 (2028-7-31以後開放)

摘要(中)

電漿表面改質技術已廣泛應用於高分子材料，表面改質可改變接觸角與官能基團，進而影響表面親疏水性質，也能使表面粗糙度產生變化。此外，也將使用不同於業界常用的PI感光性介電材料，改為使用新式的感光性介電材料來當作本研究附著力的材料。此種介電材料具較低的烘烤硬化溫度 (<200℃) 也有良好的顯影解析度，最重要的是能減少RDL生產成本。若能讓金屬導電層附著於其上不輕易發生剝離現象，便能進一步思考能否實際應用於產業界。實驗將藉由氧氣電漿蝕刻製程的氧離子轟擊打斷PID表面原子之間的化學鍵，藉此在材料表面形成特定的官能基團與帶有懸浮鍵之原子，並與金屬產生鍵結。首先分析氧氣電漿對感光性介電材料表面的化學組成與表面形貌產生何種改變，並且在表面處理後，以磁控射頻濺鍍法製備Ti/Cu金屬薄膜，觀察異質界面PID/Ti/Cu之接合情形；最後使用百格刀測試初步評估附著性，亦利用電鍍法增厚Cu層至20微米模擬實際應用之銅導線厚度，再次評估附著性。從結果得知，氧氣電漿能提高表面含氧基團的比例也能提升表面粗糙度，濺鍍薄膜具良好的附著性，卻因微結構不同而在電鍍後附著力有顯著差異，可見鍍膜製程對薄膜附著力之影響。總而言之，本實驗導入新式感光性介電材料並使用氧電漿進行表面處理，利用材料分析方法找出影響附著力的因素，為往後異質界面的接合技術提供一個改善附著力的標準作業流程。

摘要(英)

Plasma surface modification techniques have been widely used for polymer materials. Surface modification can alter contact angles and functional groups, thereby affecting surface hydrophilicity or hydrophobicity. It can also lead to changes in surface roughness. Furthermore, this study intends to replace the commonly used photo-imageable dielectric material, PI, with a new type of photo-imageable dielectric (PID) material for adhesion testing purposes. This PID has a lower curing temperature (<200℃) and excellent development resolution, which significantly reduce redistribution layers (RDL) production costs. If a strong adhesion behavior between the metal layer and the dielectric material layer can be achieved, potential industrial applications can be explored.
The experiment involves O2 plasma etching, which breaks chemical bonds between atoms on the surface of the PID. This process creates specific functional groups and dangling bonds on the surface of polymer, interacting with metals. On the first step, the changes in chemical composition and surface morphology of the PID after O2 plasma treatment was analyzed using XPS. After surface modification, Ti/Cu thin films were deposited using magnetron sputtering, and the microstructure at the interface of PID/Ti/Cu was observed by SEM. Adhesion property was preliminarily assessed using a cross-cut test, and then cross-cut test was conducted again to re-evaluate the electroplated Cu foil with a thickness of 20 μm.
As a result of this study, oxygen plasma treatment increases the proportion of oxygen-containing functional groups on the surface and enhances surface roughness. In addition, the sputter-deposited film exhibits good adhesion; however, significant differences in adhesion after electroplating were observed due to some difference observed in microstructure. This highlights the influence of the thin-film deposition process.
In conclusion, this study introduces a novel PID and employs oxygen plasma surface treatment. It utilizes material analysis methods to identify factors influencing adhesion, establishing a standard operation procedure to material characterization for future of hybrid bonding technology for heterogeneous integration.

關鍵字(中)

★ 氧電漿
★ 感光性介電材料
★ 附著力

關鍵字(英)

★ oxygen plasma
★ photosensitive dielectric
★ photo-imageable dielectric
★ adhesion

論文目次

摘要 i
Abstract ii
致謝 iv
目錄 vi
圖目錄 viii
表目錄 ix
第一章緒論 1
1-1 半導體發展概述 1
1-1-1 積體電路製程簡介 1
1-2 先進封裝製程 2
1-2-1 覆晶封裝 3
1-2-2 立體封裝技術 3
1-3 重分布層與介電質 4
1-3-1 附著力 5
1-3-2 附著力機制 5
1-4 研究目的與動機 6
第二章文獻探討 7
2-1 物理氣相沉積 7
2-1-1 薄膜沉積機制 7
2-1-2 射頻磁控濺鍍. 8
2-2 高分子介電材料與金屬的附著力 10
2-2-1 電漿表面處理 (表面改質) 對附著力的影響 10
2-2-2 不同接著層對附著力的影響 10
第三章實驗方法 11
3-1 實驗設計 11
3-2 實驗流程 11
3-2-1 試片製作 11
3-2-2 試片分析 12
3-3 材料分析方法 13
3-3-1 X光光電子能譜儀 (X-ray photoelectron spectroscopy, XPS) 13
3-3-2 接觸角量測儀 (Contact angle meter) 14
3-3-3 原子力顯微鏡 (Atomic force microscope, AFM) 14
3-3-4 掃描式電子顯微鏡 (Scanning electronic microscope, SEM) 15
3-3-5 聚焦離子束顯微鏡 (Focused ion beam, FIB) 16
3-3-6 X光繞射儀 (X-ray diffractometer, XRD) 17
3-3-7 百格測試 (Cross-cut test) 18
第四章結果與討論 19
4-1 氧氣電漿表面處理對表面性質的影響 19
4-1-1 以動態接觸角量測儀觀測水滴在PID上形貌 19
4-1-2 AFM表面粗糙度量測 20
4-1-3 XPS對不同種類之PID化學鍵結及元素分析 21
4-2 濺鍍Ti/Cu薄膜分析及附著力測試 25
4-2-1 於PID上濺鍍之金屬Ti/Cu薄膜XRD圖分析 25
4-2-2 濺鍍金屬Ti/Cu薄膜百格測試 26
4-2-3 濺鍍金屬Ti/Cu薄膜之顯微影像分析 26
4-2-4 濺鍍Ti/Cu薄膜製程優化及電鍍參數調整 28
第五章結論 31
5-1 結論與未來展望 31
參考文獻與資料 32

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指導教授

吳子嘉

審核日期

2023-8-14

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