低電流密度下極化效應對微型LED內部量子效率影響之研究

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姓名

劉亞綸(Ya-Lun Liu) 查詢紙本館藏

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光機電工程研究所

論文名稱

低電流密度下極化效應對微型LED內部量子效率影響之研究

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至系統瀏覽論文 (2025-7-19以後開放)

摘要(中)

本研究探討半極性晶向之單量子井(single quantum well, SQW) 藍光微發光二極體(µ-LED)於低電流密度下之光電特性。藉由模擬分析，探討8種晶向與不同QW厚度對內部量子效率(internal quantum efficiency, IQE)與正向電壓之影響。模擬結果發現pn-接面之內建電場與反向極化導致之電場在低電流密度下對IQE與正向電壓有顯著的影響。由能帶圖的分析顯示非極性發光二極體因內建電場導致的能帶傾斜而並非擁有最高的IQE與最大允許厚度。另外，反向極化會增加與內建電場同向之能帶傾斜，故較於接近非極性之(11-22)微發光二極體於較大QW厚度有較差的IQE。但反向極化也會減少電洞能障高度，故可在同電流密度下有更低的正向電壓。最後發現低電流密度下，於本文討論之8種晶向中，弱正向極化(10-12)微發光二極體有最高IQE與最大允許厚度，這源於弱正向極化之電場與內建電場間的平衡，使其擁有最平整的能帶。

摘要(英)

This study investigates the optoelectronic properties of blue micro-light-emitting diodes (µ-LED) based on the semipolar single quantum well (SQW) at low current density. Through simulation analysis, the influences of eight crystal orientations and different QW thicknesses on internal quantum efficiency (IQE) and forward voltage are investigated. The simulation results show that, at low current density, the built-in electric field of the p–n junction and the electric field caused by reversed polarization have a significant effect on the IQE and forward voltage. Analysis of the energy band diagram shows that non-polar LEDs do not exhibit the highest IQE and maximum allowed thickness, owing to the energy band tilt caused by the built-in electric field. Additionally, reversed polarization increases band tilt in the same direction as the built-in electric field, resulting in poorer IQE compared to non-polar LEDs. However, reversed polarization also reduces hole barrier height, resulting in lower forward voltage at the same current density. Finally, it is found that weakly positive-polarized (10-12) LEDs have the highest IQE and maximum allowed thickness at low current density, which is due to the flat energy band with reduced band tilt caused by weakly positive polarization.

關鍵字(中)

★ 半極性晶向
★ 發光二極體
★ 內部量子效率
★ 微發光二極體
★ 單量子井
★ 低電流密度

關鍵字(英)

★ semi-polar orientation
★ LEDs
★ internal quantum efficiency
★ micro-LEDs
★ single quantum well
★ low current density

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 v
圖目錄 viii
表目錄 ix
第一章、緒論 1
2-1 研究背景 1
2-2 研究動機 2
2-2-1 纖鋅礦結構GaN之極化效應 2
2-2-2 微發光二極體(Micro-LED, μ-LED)於顯示器應用之工作條件 6
2-3 研究目的 7
2-4 論文架構 7
第二章、基礎理論與原理 9
3-1 帕松方程與載子傳輸 9
3-2 載子之產生與復合模型 10
3-2-1 蕭特基-瑞德-霍爾復合 11
3-2-2 歐傑復合 11
3-2-3 自發輻射 12
3-2-4 內部量子效率 14
3-3 極化計算 14
第三章、模擬設計與架構 20
4-1 模擬設計 20
4-2 SQW μ-LED結構之設計 21
4-3 SQW μ-LED材料參數之設定 22
4-3-1 能隙(Band gap) 23
4-3-2 有效能態密度(Effective density of states)函數之計算 23
4-3-3 能帶偏移計算 25
4-3-4 載子遷移率 26
4-3-5 相對介電常數 28
4-4 SQW μ-LED半導體物理之設定 29
4-4-1 載子復合 29
4-4-2 極化 29
第四章、模擬結果與討論 31
5-1 總極化之計算與文獻比較 31
5-2 半極性微發光二極體之電流-電壓特性 33
5-3 極性、半極性、非極性、反向極性之能帶圖 34
5-4 不同半極性晶向與厚度之比較 35
第五章、結論與未來展望 45
6-1 結論 45
6-2 未來展望 46
參考文獻 48
附錄 56

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指導教授

韋安琪(An-Chi Wei)

審核日期

2023-7-18

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