| 摘要(英) |
The semiconductor thermoelectric devices have the advantage of small size, simple structure, and high reliability, it is one of the most important green energies. Graphene nanoribbon is a very promising thermoelectric material. A method for turning zigzag graphene nanoribbons into textured zigzag graphene nanoribbons by periodically removing atoms from the zigzag edges at the top and bottom has been proposed. The indented edges induce cause quantum confinement effects, resulting in a barrier-like effect that transforms the metal characteristics into semiconductor characteristics. During the fabrication process, defects may occur in the material, and the effects of these defects on the thermoelectric properties of the textured zigzag graphene nanoribbons may vary depending on their location. We found that the textured zigzag graphene nanoribbons are less sensitive to defects in the interior sites. |
| 參考文獻 |
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