增強型異質結構高速移導率電晶體大信號模型之建立及其在微波放大器之應用

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姓名

王志偉(Zhi-Wei Wang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

增強型異質結構高速移導率電晶體大信號模型之建立及其在微波放大器之應用
(A Large-signal Mode for E-PHEMT and It Application in Microwave Amplifier Design)

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摘要(中)

隨著微波技術的日趨重要，對主動元件的要求也愈來愈高，而傳統砷化鎵金屬-半導體電晶體(MESFET)在功率上的表現已不敷使用。異質結構高速場效電晶體(HEMT)、異質接面雙載子電晶體(HBT)在高頻電路的角色愈來愈顯重要。本論文是以增強型異質結構高速移導率電晶體(enhancement-mode HEMT)元件特性探討與模型化技術為主。
本論文首先討論異質結構高速場效電晶體的工作原理，探討元件的非線性特性，包括功率增益壓縮、諧波失真等。並利用Cold FET等量測方法萃取元件內外部等效電路參數以建立小訊號模型，對內部本質元件的非線性特性加以分析。之後，結合電壓-電流方程式以及非線性電阻、電容方程式，建立元件之大信號模型，並與量測之直流、高頻功率特性及線性度作比較。最後，我們將大信號模型實際用於電路設計，設計一2.4GHz微波放大器。

摘要(英)

In this thesis,the device characteristics and device modeling technologies of enhancement-mode pHEMTs are investigated. Firstly, the device physics and non-linear characteristics of enhancement-mode pHEMTs are studied, including gain compression and harmoic distortion. By cold-FET measurement and Yang-Long dc measurement, the extrinsic elements of small-signal model can be estimated accurately. The other intrinsic parameters of small-signal can be determined based on the matrix transformation with the on wafer measured S-parameters.The intrinsic model elements, such as Cgs, Cgd, Cds, Rds, Gm,τ and Ri can be extracted under different Vds and Vgs bias points.
In this study we propose a modified large-signal model for enhancement-mode pHEMTs, which is based on the conventional Curtice model. The modified large-signal model is based on the structure of Curtice model. In order to take the device non-linear behaviors into consideration, instead of using traditional junction capacitances (Cgs, Cgd), channel resistance (Ri), and output resistance (Rds), we propose suitable non-linear equations to describe these elements, which are the functions of Vgs and Vds. We also examine the accuracy of the large-signal model. Using scalable parasitic components attached to the modified large-signal model, a completed RF large-signal model covering various gate-widths can correctly predict the device’s dc and rf characteristics. Using thise model, a 2.4 GHz microwave amplifier was designed and tested.

關鍵字(中)

★ 異質結構場效電晶體
★ 砷化鎵
★ 小信號模型
★ 大信號模型
★ 放大器

關鍵字(英)

★ GaAs
★ Small-signal model
★ Large-signal model
★ E-PHEMT
★ Amplifier

論文目次

第一章緒論
§1.1 研究動機…………………………………………………………...1
§1.2 論文架構…………………………………………………………...3
第二章異質結構高速移導率場效電晶體元件特性探討與量測分析
§2.1 簡介………………………………………………………….……..5
§2.2 高速移導率場效電晶體工作原理………………………………..5
§2.3 非線性效應……………………………………………………….11
§2.3.1 弱非線性效應……………………………………………..11
§2.3.2 強非線性效應……………………………………………..18
§2.3.3 鄰近通道功率比例………………………………………..24
§2.4 元件量測結果與討論……………………………………………26
§2.4.1 直流及高頻量測結果…………………………………….26
§2.4.2 強非線性效應下的功率特性…………………………….32
§2.5 結語……………………………………………………………….39
第三章增強型異質結構高速移導率電晶體小訊號模型建立
§3.1 簡介……………………………………………………………….40
§3.2 理論分析………………………………………………………….40
§3.3 外部寄生元件參數的決定………………………………………42
§3.3.1 源極電阻的萃取………………………………………….42
§3.3.2 Cold FET量測萃取外部元件參數………………………..43
§3.4 內部本質元件的決定……………………………………………47
§3.5 萃取結果討論……………………………………………………51
§3.6 線性模型的尺寸法則……………………………………………62
§3.7 不同溫度下的小信號模型………………………………………65
§3.8 結語………………………………………………………………68
第四章增強型異質結構高速移導率電晶體大訊號模型建立
§4.1 簡介………………………………………………………………69
§4.2 大訊號模型介紹…………………………………………………69
§4.3 大訊號模型的萃取方法與流程…………………………………71
§4.3.1 電流電壓方程式…………………………………………...71
§4.3.2 電容與電阻非線性方程式………………………………...74
§4.4 模擬結果與討論…………………………………………………78
§4.4.1 小訊號S參數模擬………………………………………..78
§4.4.2 高頻功率特性模擬………………………………………..79
§4.4.3 非線性特性模擬…………………………………………..84
§4.5 大信號模型的尺寸法則………………………………………...90
§4.5.1 尺寸法則分析……………………………………………..90
§4.5.2 Scaleable大信號模型………………………………………91
§4.6 結語………………………………………………………………95
第五章 2.4 GHz微波放大器IC之設計
§5.1 簡介………………………………………………………………96
§5.2 電路設計…………………………………………………………96
§5.3 電路量測結果與分析……………………………………………99
§5.4 結語……………………………………………………………...102
第六章結論………………………………………………………..103
參考文獻…………………………………………………………….104
附錄
附錄A 2.4GHz可變增益放大器
簡介……………………………………………………………..….1
附錄B 發表於2002年RF IC Symposium的文章………..…..9

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指導教授

詹益仁(Yi-Jen Chan)

審核日期

2002-7-4

推文