製備單晶鎳矽化物奈米管結構陣列及其自驅動近紅外光感測特性之研究

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姓名

何宗倫(Zong-Lun He) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

製備單晶鎳矽化物奈米管結構陣列及其自驅動近紅外光感測特性之研究

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摘要(中)

在本研究中，我們在室溫下利用聚苯乙烯奈米球微影術結合金屬輔助電化學蝕刻法，在(001)矽晶基材上成功的以一步驟、低成本且安全的方式製備出大面積規則有序且準直排列之矽單晶奈米管陣列結構，藉由調控奈米球之尺寸大小與蝕刻時間可以分別控制矽單晶奈米管的外徑以及長度，接著以濺鍍沉積鎳金屬薄膜於矽單晶奈米管結構表面，再結合高溫熱處理製備出鎳矽化物奈米管陣列結構。藉由SEM、TEM與其相對應之電子選區繞射圖譜鑑定分析可證明所製備出之矽單晶奈米管結構及NiSi2奈米管結構之形貌及其單晶結構並具備高度準直性。
利用光譜儀量測上述結構其光學性質，從其結果可發現濺鍍鎳金屬薄膜於結構表面可改善矽晶基材於近紅外光波段之光吸收，且經由高溫熱處理形成鎳矽化物後又可進一步提升，因此以鎳矽化物為基礎，使用940 nm之近紅外光波段之光源照射，對所製備之矽基紅外光感測元件進行光感測性質量測，在不施加額外電壓下可展現自驅動感測特性，並分析探討近紅外光響應度、靈敏度及響應與恢復時間等特性。

摘要(英)

In this study, we successfully fabricated large-area, well-ordered, and vertically aligned single-crystalline silicon nanotube arrays on (001) silicon substrates at room temperature using polystyrene nanosphere lithography combined with metal-assisted electrochemical etching. This method is a one-step, low-cost, and safe process. By adjusting the size of the nanospheres and the etching time, we could control the outer diameter and length of the silicon nanotubes, respectively. Subsequently, we deposited a nickel thin film onto the surface of the silicon nanotube structures via sputtering, followed by high-temperature annealing to produce nickel silicide nanotube arrays. The morphology and single-crystalline structure of the fabricated silicon nanotube structures and NiSi2 nanotube structures, as well as their high vertical alignment, were confirmed through SEM, TEM, and corresponding selected area electron diffraction (SAED) analysis.
Using a spectrometer, we measured the optical properties of the aforementioned structures. The results revealed that sputtering a nickel thin film onto the structure′s surface improved the silicon substrate′s light absorption in the near-infrared region. Moreover, after forming nickel silicide through high-temperature annealing, the light absorption further increased. Consequently, using nickel silicide as the basis, we used a 940 nm near-infrared light source to measure the photo-sensing properties of the fabricated silicon-based infrared photodetectors. These detectors exhibited self-powered sensing characteristics without the application of an external voltage. We analyzed and discussed the near-infrared responsivity, sensitivity, and response and recovery times of these photodetectors.

關鍵字(中)

★ 矽晶奈米管
★ 鎳矽化物
★ 近紅外光感測元件

關鍵字(英)

論文目次

第一章前言及文獻回顧 1
1-1 前言 1
1-2 一維矽單晶奈米結構 2
1-2-1 一維矽單晶奈米線結構之製備及應用 2
1-2-2 一維矽單晶奈米管結構之製備及應用 4
1-3 電化學蝕刻法製備一維矽晶奈米結構 6
1-3-1 一維矽晶奈米孔洞製備 6
1-3-2電化學金屬催化蝕刻法製備一維矽晶奈米線結構 7
1-4 光感測元件 8
1-4-1 金屬與半導體接觸理論 8
1-4-2 蕭基接面之光感測機制 10
1-5 金屬矽化物 11
1-5-1金屬矽化物之製程與應用 11
1-5-2金屬矽化物之紅外線光感測應用 12
1-6 研究動機與目標 13
第二章實驗步驟及儀器設備 15
2-1實驗步驟 15
2-1-1 矽單晶基材使用前處理 15
2-1-2 自組裝奈米球陣列模板製備 15
2-1-3 蒸鍍純金薄膜 15
2-1-4 電化學蝕刻製備矽單晶奈米線陣列 16
2-1-5 濕式化學蝕刻製備矽單晶奈米尖孔洞陣列 16
2-1-6 電化學蝕刻製備矽單晶奈米孔洞通道陣列 16
2-1-7 電化學蝕刻製備矽單晶奈米管陣列 17
2-1-8 鎳矽化物奈米管陣列製備 17
2-1-9 濺鍍純鋁薄膜 18
2-1-10 光感測元件之製備 18
2-2 試片分析 18
2-2-1掃描式電子顯微鏡 18
2-2-2 穿透式電子顯微鏡 19
2-2-3 可見光-近紅外光光譜儀 19
2-2-4 影像式水滴接觸角量測儀 20
2-2-5 近紅外光偵測系統 20
第三章結果與討論 21
3-1 單層自組裝奈米球模板陣列製備 21
3-2 規則排列之矽單晶奈米線與奈米管陣列 22
3-2-1 奈米球微影術結合金屬輔助電化學蝕刻法製備矽單晶奈米線陣列 22
3-2-2 奈米球微影術結合濕式化學蝕刻法製備矽單晶奈米孔洞陣列 24
3-2-3電化學蝕刻法製備矽單晶奈米孔洞通道陣列 24
3-2-4 奈米球微影術結合金屬輔助電化學蝕刻法製備矽單晶奈米管陣列 25
3-2-5可見光-近紅外光積分球光譜儀分析 27
3-3 鎳矽化物奈米管陣列 28
3-3-1鎳矽化物奈米管陣列製備 28
3-3-2可見光-近紅外光量測與分析 30
3-4矽基蕭基近紅外光感測元件 31
3-4-1蕭基近紅外光感測元件之特性分析與探討 31
3-4-2 蕭基近紅外光感測元件之靈敏度、響應度與響應時間 34
第四章結論與未來展望 37
參考文獻 38
表目錄 46
圖目錄 48

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指導教授

鄭紹良(Shao-Liang Cheng)

審核日期

2024-8-21

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