氧化鎵深紫外光感測器之光電特性研究

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姓名

鍾宇浩(Yu-Hao Chung) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

氧化鎵深紫外光感測器之光電特性研究
(Photoelectric characteristics of Ga2O3 deep-ultraviolet photodetectors)

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至系統瀏覽論文 (2027-8-31以後開放)

摘要(中)

有鑑於當前5G/6G通訊、電動車及快充等高效率電子技術的發展，
使得寬能隙半導體相關技術受到重視。其中氮化鎵(GaN)及碳化矽(SiC)
是兩個相當具有代表性的寬能隙半導體材料，除了這兩者發展較為成
熟的材料以外，更為新穎的極寬能隙半導體(Ultra-wide bandgap, UWBG)
概念在近年被提出且應用於功率半導體元件，氧化鎵(Ga2O3)是極寬能
隙半導體的代表性材料，該材料具有具備更寬的能隙與更優異的電氣
特性，相當具有潛力突破目前氮化鎵及碳化矽所達到的元件性能指標。
本論文研究以高能脈衝磁控濺鍍鍍(High Power Impulse Magnetron
Sputtering，HiPIMS)磊晶生長氧化鎵於石英等基板，透過高能量且高密
度的電漿技術生長磊晶氧化鎵薄膜，實驗主要分為兩部分，第一部分為
藉由固定生長溫度 600 度來改變不同基板、調節反應氣體分壓及儲能
時間(Off time)，探討在不同製程條件對氧化鎵薄膜結晶性、光學特性
的影響，最後磊晶出多晶 (Polycrystalline)之β-Ga2O3薄膜。
在紫外光檢測器方面，利用氧化鎵超寬能隙的光學特性來探測深紫外
波段的光，並比較在不同電極下，對元件電性的影響，以及元件是否對
於紫外光及可見光之響應具有選擇性，並且分析元件在光源開啟與關
閉狀態之響應速度。

摘要(英)

Due to the current advancements in 5G/6G communications, electric
vehicles, and fast charging, high-efficiency electronic technologies have
brought wide bandgap semiconductor-related technologies into the spotlight.
Gallium nitride (GaN) and silicon carbide (SiC) are two of the wide bandgap
semiconductor materials. In addition to these more mature materials, the
novel concept of ultra-wide bandgap (UWBG) semiconductors has been
proposed in recent years and applied to power semiconductor devices.
Gallium oxide (Ga2O3) is a representative material of ultra-wide bandgap
semiconductors, possessing a wider bandgap and superior electrical
properties, with significant potential to surpass the performance indicators
of current gallium nitride and silicon carbide devices.
This thesis investigates the epitaxial growth of gallium oxide on quartz and
other substrates using High Power Impulse Magnetron Sputtering (HiPIMS).
Based on the technique of high-energy and high-density plasma, epitaxial
gallium oxide thin films have been grown. The experiment is divided into
two main parts. The first part explores the affects of different process
conditions on the crystallinity and optical properties of gallium oxide thin
films by fixing the growth temperature at 600 degrees Celsius, varying the
substrates, adjusting the partial pressure of the working gas, and the off time
(storage time) of HiPIMS. Ultimately, polycrystalline β-Ga2O3 thin films are
epitaxially grown.
Regarding ultraviolet detectors, the optical properties of gallium oxide′s
ultra-wide bandgap are utilized to detect deep ultraviolet light. The electrical
characteristics of the devices under different electrodes
have been
discussed and the devices have been measured the selectivity in response to
ultraviolet and visible light. Additionally, the response speed of the devices
also is analyzed.

關鍵字(中)

★ 氧化鎵
★ 濺鍍

關鍵字(英)

★ Ga2O3
★ Sputtering

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章緒論 1
1.1光檢測器背景介紹 1
1.2研究動機 3
1.3論文架構 6
第二章基礎理論與文獻回顧 7
2.1氧化鎵基本性質 7
2.2薄膜成長理論 11
2.3濺鍍法 14
2.3.1反應式濺鍍 15
2.3.2高功率脈衝磁控濺鍍 17
2.4紫外光檢測器原理 19
2.5文獻回顧 23
第三章元件製作及量測儀器 31
3.1多腔式真空濺鍍系統 31
3.2氧化鎵薄膜沉積 32
3.3光檢測器元件製作 33
3.4薄膜分析儀器 36
3.4.1 X光繞射儀(XRD) 36
3.4.2掃描式電子顯微鏡(SEM) 37
3.4.3 X射線光電子能譜儀(XPS) 38
3.4.4原子力顯微鏡(AFM) 39
3.4.5穿透式電子顯微鏡(TEM) 40
3.4.6紫外-可見-近紅外光譜儀(UV-VIS-NIR Spectrophotometer) 41
3.5光檢測器元件量測系統 42
第四章實驗結果 43
4.1反應性濺鍍分析 43
4.2氧化鎵薄膜之分析 43
4.2.1改變基板之分析 46
4.2.2改變儲能時間(Off time)之分析 51
4.2.3改變氧氣通量之分析 56
4.3元件電性之分析 65
4.3.1光暗電流比分析 67
4.3.2紫外光-可見光拒斥比分析 69
4.3.3響應速度分析 71
第五章結論與未來展望 73
5.1結論 73
5.2未來展望 76
參考文獻 77

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2024-8-1

推文