應用於X頻段通訊雷達收發系統之放大器設計

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姓名

張耿豪(Keng-Hao Chang) 查詢紙本館藏

畢業系所

通訊工程學系在職專班

論文名稱

應用於X頻段通訊雷達收發系統之放大器設計
(Amplifier Design for X-Band Communication Radar Transceiver Syatem)

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摘要(中)

本學位論文提出使用於X頻段(9~10 GHz)通訊雷達系統的收發機放大器設計。基於近年物聯網的概念越發普及，多數系統皆需具備通訊功能，因此收發系統的耗電量也越發被重視。有鑒於此，設計方面著重於在提高增益的同時也須降低晶片功耗。

本論文研發第一個晶片為用於X頻段發射機的功率放大器設計，此顆晶片為使用穩懋0.15 μm GaN製程所製作的功率放大器，電路採用兩共源極電路串聯的架構增加其增益，其小訊號增益為25 dB，飽和輸出功率超過2 W，中心頻的效率為28%，而晶片面積為2.35×1.75 mm2。

本論文研發第二個晶片為用於X頻段接收機的低雜訊放大器設計，此顆晶片為使用穩懋0.15 μm GaAs製程所製作的低雜訊放大器，電路架構採用電流再利用(Current-Reused)，以架構降低其耗電量，電路最大增益為20 dB，雜訊最小值為1.35 dB，量測功耗為24 mW，晶片面積為1.11×1.1 mm2。

摘要(英)

Novel designs of transmitting and receiving amplifiers applied for X-band (9~10GHz) radar communications are proposed, investigated, implemented, measured, tested and verified in this thesis. With rapidly growing applications of the Internet of Things (IoT) concept, most applications are equipped with communication functionality, thus emphasizing the importance of power consumption reduction in transceiver systems. Accordingly, the designs proposed in this thesis inevitably focus on increase of power gain with reduction of overall power consumption of a single chip.

The first chip designed in this thesis is a power amplifier working in a X-band transmitter. This chip is fabricated using a 0.15 μm GaN process from WIN. The circuit employs a cascade configuration to increase its gain. Its small-signal gain is up to 25 dB, with a saturation output power exceeding 2 W, and the best efficiency is 30%. The chip occupies an area only of 2.35×1.75 mm².

The second chip is a low-noise amplifier designed for X-band receivers. This chip is fabricated using a 0.15 μm GaAs process from WIN. The circuit architecture adopts a Current-Reused structure to reduce power consumption. The circuit gain is 20 dB, with a minimum noise figure of 1.5 dB. The measured power consumption is 24 mW, and the chip occupies an area only of 1.11×1.106 mm²

關鍵字(中)

★ 放大器
★ 低功耗

關鍵字(英)

論文目次

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 V
表目錄 IX
第一章緒論 1
1-1 研究動機 1
1-2 研究成果 2
1-3 章節描述 2
第二章 0.15umGaAs製程之X頻段電流再利用放大器 3
2-1 低雜訊放大器介紹 3
2-2 低雜訊放大器重要參數 3
2-2-1 散射參數 4
2-2-2 穩定度 6
2-2-3 雜訊指數 8
2-2-4 等校雜訊溫度 9
2-2-5 線性度 12
2-3 低雜訊放大器架構 14
2-3-1 串接式放大器 14
2-3-2 回授式放大器 15
2-3-3 源極退化電感放大器 16
2-3-4 疊接式放大器 16
2-3-5 電流再利用放大器 17
2-4 9-10GHz低功耗低雜訊放大器 18
2-4-1 電路架構及設計原理 18
2-4-2 模擬與量測結果 23
2-4-3 結果與討論 27
第三章 0.15umGaN製程之X頻段多級功率放大器 28
3-1 功率放大器簡介 28
3-2 功率放大器重要參數 29
3-2-1 輸出功率 29
3-2-2 線性度 30
3-2-3 效率 31
3-3 放大器分類 32
3-3-1 線性放大器 33
3-3-2 非線性放大器 37
3-4 負載線定理及負載牽引方法 38
3-4-1 負載線定理 39
3-4-2 負載牽引方法 41
3-5 9-10GHz兩級串接式放大器 43
3-5-1 電路架構及原理 43
3-5-2 電路模擬與量測結果 47
3-5-3 結果與討論 52
第四章結論 53
4-1 結論 53
4-2 未來期許及研究方向 53
References 54

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指導教授

林嘉慶(Jia-Cing Lin)

審核日期

2024-7-10

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