利用TPBi增益綠光鈣鈦礦電致發光元件效率之分析

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姓名

蘇峻威(Jun-Wei Su) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

利用TPBi增益綠光鈣鈦礦電致發光元件效率之分析
(Analysis of Efficiency Enhancement Electroluminescent Devices using TPBi in Green Perovskite)

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至系統瀏覽論文 (2027-8-1以後開放)

摘要(中)

全無機鈣鈦礦材料CsPbBr3是一種半導體材料，不僅具有優異的半導體特性，還具備良好的發光波長可調性、可控的能隙，以及可透過簡易且低成本的製程方式製造等優點。目前，它廣泛應用於太陽能電池、光電感測器與發光元件等領域。本實驗針對鈣鈦礦材料在發光元件中的應用進行研究與分析，並為了未來商業化的需求，製備出具有均勻且大面積的元件，因此採用了單源熱蒸鍍法來製備鈣鈦礦薄膜。
本研究延續了實驗室對於CsPbBr3鈣鈦礦材料綠色發光元件的研究。為了改善發光效率，我們透過探討CsPbBr3發光層的厚度並調整退火持溫時間，以提升元件的性能。結果顯示，在薄膜厚度為350nm的情況下，經過100分鐘的退火持溫，可獲得波長529nm、亮度達13320 cd/m2的高亮度發光元件。此外，為了改善元件電流擴散不佳的問題，研究中引入了TPBi電子阻擋層，並發現這樣的設計能獲得波長530nm、亮度12920 cd/m2的發光元件，且電流效率提升至1.92 cd/A，相較於未導入TPBi的元件之電流效率1.3 cd/A有明顯改善。進一步的研究顯示，將TPBi導入的發光元件的電極材料從碳更換為銀後，成功製備出波長為529 nm、亮度達11067 cd/m²的高均勻性發光元件。此外，在不改變製程的前提下，僅需更換電極材料，即可同時製備出CsPbBr₃鈣鈦礦的正式與反式結構發光元件。

摘要(英)

CsPbBr3, a fully inorganic perovskite material, is a semiconductor with excellent properties. It has a tunable emission wavelength, controllable bandgap, and can be produced using simple and low-cost fabrication methods. Currently, it is widely used in solar cells, optoelectronic sensors, and light-emitting devices. In this study, we focus on the application of perovskite materials in light-emitting devices, analyzing and researching their performance. To meet future commercialization needs, we prepared uniform and large-area devices by using a single-source thermal evaporation method to fabricate perovskite thin films.
This study continues our lab′s research on CsPbBr3 perovskite green light-emitting devices. To improve the luminous efficiency, we explored the thickness of the CsPbBr3 emission layer and adjusted the annealing time to enhance the device′s performance. The results showed that with a film thickness of 350 nm and 100 minutes of annealing, we could achieve a high-brightness light-emitting device with a wavelength of 529 nm and brightness of 13,320 cd/m². Additionally, to address the issue of poor current spreading, we introduced a TPBi electron-blocking layer. This design resulted in a light-emitting device with a wavelength of 530 nm, brightness of 12,920 cd/m², and an improved current efficiency of 1.92 cd/A, compared to 1.3 cd/A in devices without TPBi. Further research showed that by replacing the carbon electrodes with silver in TPBi-based devices, we successfully produced a highly uniform light-emitting device with a wavelength of 529 nm and brightness of 11,067 cd/m². Moreover, by simply changing the electrode material, we could fabricate both normal and inverted structures of CsPbBr3 perovskite light-emitting devices without altering the process.

關鍵字(中)

★ 鈣鈦礦
★ 1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯

關鍵字(英)

★ Perovskite
★ TPBI

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 xi
第一章緒論 I
1-1 前言 1
1-2 鈣鈦礦材料介紹 2
1-3 鈣鈦礦薄膜之應用 3
1-4 鈣鈦礦發光二極體製備方法 9
1-4-1 溶液法 9
1-4-1-1 一步驟法 9
1-4-1-2 兩步驟法 10
1-4-2 蒸鍍法 15
1-4-2-1 雙源熱蒸鍍法 15
1-4-2-2 單源熱蒸鍍法 16
1-5 鈣鈦礦發光二極體之改善 20
1-5-1 電子傳輸層改善 20
1-5-2 電洞傳輸層改善 21
1-6 研究動機 29
第二章實驗方法 30
2-1 實驗材料與儀器 30
2-1-1 實驗材料 30
2-1-2 實驗儀器 30
2-2 實驗步驟 32
2-2-1 ITO導電玻璃清洗 32
2-2-2 製備CsPbBr3薄膜 32
2-2-3 薄膜熱處理 33
2-2-4 碳電極刮塗 33
2-3 實驗儀器分析介紹 34
2-3-1 X射線繞射儀(X-ray Diffractometer,XRD) 34
2-3-2 紫外線/可見光分光光譜儀(Ultraviolet-visble spectroscopy,UV-visble) 34
2-3-3 掃描式電子顯微鏡(Scanning Electron Microscope,SEM) 34
2-3-4 電致發光元件I-V curve量測 35
第三章結果與討論 36
3-1 CsPbBr3薄膜熱處理分析 36
3-2 元件結構 41
3-2-1 減少主動層厚度對元件之影響 41
3-2-2 元件電流擴散之改善 48
3-2-3改變電極製作出高均勻發光元件 55
第四章結論 61
參考文獻 62

參考文獻

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指導教授

詹佳樺(Chia-Hua Chan)

審核日期

2024-8-15

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