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類別	日期	題名	作者
[物理學系] 期刊論文	2011	Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure	Chen,CW; Hung,SC; Lee,CH; Tun,CJ; Kuo,CH; Yang,MD; Yeh,CW; Wu,CH; Chi,GC
[物理學系] 期刊論文	2010	Catalyst-free ZnO nanowires grown on a-plane GaN	Chen,CW; Pan,CJ; Tsao,FC; Liu,YL; Kuo,CW; Kuo,CH; Chi,GC; Chen,PH; Lai,WC; Hsueh,TH; Tun,CJ; Chang,CY; Pearton,SJ; Ren,F
[光電科學與工程學系] 期刊論文	2010	GaN-Based LEDs With AZO:Y Upper Contact	Chen,PH; Lai,WC; Peng,LC; Kuo,CH; Yeh,CL; Sheu,JK; Tun,CJ
[化學工程與材料工程學系 ] 期刊論文	2010	Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate	Chen,YJ; Kuo,CH; Tun,CJ; Hsu,SC; Cheng,YJ; Liu,CY
[光電科學與工程學系] 期刊論文	2010	Nitride-based blue light-emitting diodes with multiple Mg(x)N(y)/GaN buffer layers	Fu,YK; Kuo,CH; Tun,CJ; Chang,LC
[物理研究所] 期刊論文	2005	Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors	Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ
[光電科學研究所] 期刊論文	2009	Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates	Kuo,CH; Chang,LC; Kuo,CW; Tun,CJ
[光電科學研究所] 期刊論文	2009	Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step	Kuo,CH; Fu,YK; Yeh,CL; Tun,CJ; Chen,PH; Lai,WC; Chang,SJ
[光電科學研究所] 期刊論文	2009	Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition	Kuo,CW; Fu,YK; Kuo,CH; Chang,LC; Tun,CJ; Pan,CJ; Chi,GC
[光電科學研究所] 期刊論文	2009	Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls	Kuo,CW; Lee,YC; Fu,YK; Tsai,CH; Wu,ML; Chi,GC; Kuo,CH; Tun,CJ
[光電科學研究所] 期刊論文	2009	GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars	Lai,WC; Chen,PH; Chang,LC; Kuo,CH; Sheu,JK; Tun,CJ; Shei,SC
[物理研究所] 期刊論文	2003	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
[物理研究所] 期刊論文	2002	GaN p-n junction diode formed by Si ion implantation into p-GaN	Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
[光電科學研究中心] 期刊論文	2002	Characterization of Si implants in p-type GaN	Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
[物理研究所] 期刊論文	2002	Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN	Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT
[光電科學研究中心] 期刊論文	2002	n(+)-GaN formed by Si implantation into p-GaN	Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
[光電科學與工程學系] 期刊論文	2003	Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers	Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP
[光電科學與工程學系] 期刊論文	2004	Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition	Tu,RC; Tun,CJ; Chuo,CC; Lee,BC; Tsai,CE; Wang,TC; Chi,J; Lee,CP; Chi,GC
[光電科學與工程學系] 期刊論文	2003	Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature	Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC
[光電科學與工程學系] 期刊論文	2003	Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers	Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
[光電科學與工程學系] 期刊論文	2003	Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC
[光電科學研究所] 期刊論文	2009	Growth and characterization of c-plane AlGaN on gamma-LiAlO2	Tun,CJ; Kuo,CH; Fu,YK; Kuo,CW; Chou,MMC; Chi,GC
[物理研究所] 期刊論文	2006	Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride	Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC

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