"Abernathy,CR"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [電機工程研究所] 期刊論文 |
2004 |
Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers |
Buyanova,IA; Bergman,JP; Chen,WM; Thaler,G; Frazier,R; Abernathy,CR; Pearton,SJ; Kim,J; Ren,F; Kyrychenko,FV; Stanton,CJ; Pan,CC; Chen,GT; Chyi,J; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
Buyanova,IA; Izadifard,M; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes |
Buyanova,IA; Izadifard,M; Storasta,L; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2005 |
Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection |
Chen,WM; Buyanova,IA; Nishibayashi,K; Kayanuma,K; Seo,K; Murayama,A; Oka,Y; Thaler,G; Frazier,R; Abernathy,CR; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors |
Chu,SNG; Ren,F; Pearton,SJ; Kang,BS; Kim,S; Gila,BP; Abernathy,CR; Chyi,JI; Johnson,WJ; Lin,J |
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| [電機工程研究所] 期刊論文 |
2004 |
Si+ ion implanted MPS bulk GaN diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS |
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| [電機工程研究所] 期刊論文 |
2004 |
Lateral Schottky GaN rectifiers formed by Si+ ion implantation |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates |
Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
2004 |
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors |
Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2006 |
Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications |
Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J |
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| [電機工程研究所] 期刊論文 |
2001 |
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors |
Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F |
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| [電機工程研究所] 期刊論文 |
2001 |
Schottky rectifiers fabricated on free-standing GaN substrates |
Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor |
Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2003 |
Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors |
Kang,BS; Kim,S; Kim,J; Ren,F; Baik,K; Pearton,SJ; Gila,BP; Abernathy,CR; Pan,CC; Chen,GT; Chyi,JI; Chandrasekaran,V; Sheplak,M; Nishida,T; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2004 |
GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates |
LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2003 |
Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2003 |
Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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