在資源枯竭及能量需求量大的時代，太陽能勢必成為未來的新興能源。本研究的主要目的是研製非晶矽鍺及具組成梯度能隙的非晶質矽合金p-i-n太陽能電池。主要是利用本質非晶矽鍺層吸收600奈米附近的強太陽光，以及利用組成梯度能隙(composition-graded band-gap)的本質層吸收不同波段的太陽光。實驗結果顯示，使用組成梯度能隙當本質層的太陽能電池可獲得較大的開路電壓，而其較低的短路電流及填充因子(fill factor)，造成元件整體的效率下降。 The p-i-n solar cells with amorphous silicon-alloy had been designed and fabricated in this study. The constant-gap i-a-SiGe:H layer and the composition-graded-gap i-a-SiGe:H layer were used as the main absorption layer respectively. The peak wavelength of the i-SiGe:H absorptance spectrum was around 600 nm which is the irradiance peak wavelength in solar spectrum, while the composition-graded i-a-SiGe:H layer had the higher absorptance for light wavelength ranging from 400 nm to 600 nm. From the experiment results, it could be seen the efficiencies of devices with composition-graded-gap and constant-gap structures were 0.94% and 1.22% respectively, but the device with composition-graded-gap structure had a higher open-circuit voltage (Voc).
