應用在> W頻段（>110GHz）覆晶式具超高飽和電流-頻寬乘積的近彈道傳輸光偵測器;+C3054 Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode with a Flip-Chip Bonding Structure

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題名:	應用在> W頻段（>110GHz）覆晶式具超高飽和電流-頻寬乘積的近彈道傳輸光偵測器;+C3054 Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode with a Flip-Chip Bonding Structure
作者:	吳喬蓁;Ciao-Jhen Wu
貢獻者:	電機工程研究所
關鍵詞:	光偵測器;覆晶結合;photodiode;flip chip bonding
日期:	2009-07-01
上傳時間:	2009-09-22 12:16:45 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	本論文針對1.55μm波長的光纖通訊系統中接收端前級元件光二極體之製作與研究，在元件幾何結構上摻入一層P型的電場承受層，因此可讓內部的電子速度維持在over shoot velocity，克服P-I-N 光偵測器與傳統單載子傳輸光偵測器的缺點，進而達到高速、高響應度、高頻寬的表現。並且利用覆晶結合技術與附有金柱基的氮化鋁基板結合，讓主動區面積28?m2的元件能夠承受更高的飽和電流(13.6mA)，而主動區面積144?m2預估擁有創新紀錄的飽和電流-頻寬之乘積(6660mA-GHz, 37mA, 180GHz)。 In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) bandwidth (>110GHz), and extremely high saturation current-bandwidth product performance (37mA, >110GHz, >4070mA-GHz). NBUTC-PDs with different active areas (28 to 144?m2) are fabricated and flip-chip bonded with co-planar waveguides (CPWs) onto an AlN based pedestal. This improves the high-power performance without seriously sacrificing the speed performance. In addition, the saturation-current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat-sinking), the saturation current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28?m2). The measurement and modeling results indicate that a device with a 144?m2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation current-bandwidth product (6660mA-GHz, 37mA, 180GHz).
顯示於類別:	[電機工程研究所] 博碩士論文

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