在瞬息萬變快速演進的半導體工業中，絕緣層上矽材料（SOI，Silicon-on-Insulator）以它獨特的結構解決了一般使用矽塊材製作半導體元件所發生的漏電流、過熱等關鍵問題，將半導體產業又推向了下一個世代。近年來，NanoClub發展出熱力微波製程（Thermal Microwave Process）來製作SOI材料，以能避免異質材料間之熱應力問題且比一般單使用微波加熱更具效率及轉移後薄膜品質較佳的優點為號召，期能成為現今製作SOI材料的主流製程。 本研究即進一步深入探討其熱力微波中的溫度氣氛參數，比較在不同的溫度氣氛下施以微波輻射對矽中氫離子的活化激發效應。實驗結果發現，在高於室溫的溫度氣氛下施以微波照射較能激發矽中的氫離子，使之易於生成氫氣泡；隨著溫度氣氛的提高，其表面的氫氣泡個數、尺寸大小均隨之有增加的趨勢，可證明溫度氣氛越高越能活化矽中的氫離子，使之具有更多的動能聚合形成氫氣泡；且於170℃以上的溫度氣氛下施以微波照射，能大幅的提升表面氫氣泡的數量及尺寸。 In the fast-changing semiconductor industry, silicon on insulator (SOI) depending on its unique structure solves many crucial issues that devices fabricated by conventional bulk silicon processing usually have some problems such as current leakage and heat generation. Recently, NanoClub has developed a Thermal-Microwave (TM) process to make SOI materials so as to avoid the thermal stress between the two dissimilar materials and obtain higher efficiency and higher quality than pure microwave process. In this study, the temperature parameter of the ambiance in TM process has been further discussed, which the effects of activated hydrogen ions excited by microwave irradiation in Si were compared with each other at different temperature ambiance. Hydrogen ions can be easy to be excited from Si and form hydrogen bubbles by microwave irradiation above room temperature ambiance, as indicated from experimental results. The numbers and sizes of hydrogen bubbles beneath the sample surface were increased by increasing the temperature of the ambiance. Besides, according to the above results, it could be proved that higher temperature ambiance excited more hydrogen ions in Si and then provided more kinetic energy for the coalescence of hydrogen bubbles. The numbers and sizes of the hydrogen bubbles could be greatly increased under microwave irradiation above 170℃ temperature ambiance.