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    題名: 利用原子力顯微鏡結合選擇性化學蝕刻法分析自組裝矽鍺量子點成分分佈之研究;The Composition Analysis of Self-Assembled Si-Ge Quantum Dots by Combination of Atomic Force Microscopy and Selective Chemical Etching
    作者: 張宏臺;Hung-Tai Chang
    貢獻者: 材料科學與工程研究所
    關鍵詞: 矽鍺;自我排列;量子點;超高真空化學氣相沉積;Self-assembled;UHV/CVD;Quantum dot;SiGe;Island
    日期: 2009-07-15
    上傳時間: 2009-09-21 11:29:22 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 在現今的科技中,自我排列之鍺量子點已經引起十分廣泛的興趣,不僅在光電材料與元件有潛在的應用性,更可與現今矽製程相整合。有著適當的晶格差異(4.2%),鍺/矽在奈米等級下的製程和探討顯示出一個典範的系統。 在本論文中,藉由選擇性濕式蝕刻的特性,可得知矽鍺量子點之內部成份分佈,其原因在於矽鍺量子點之發光特性及吸收光譜等的物理特性,與其之形狀、結構、應力狀態、成份分佈、生長條件有著息息相關的關係。 在半導體產業方面,由於加工的需要所以必須經由矽披覆過程才能繼續下一道的製程,再者,對於光電元件方面,矽鍺量子點需要矽披覆過程才能產生量子侷限效應。由此可知,研究矽鍺量子點經由矽披覆後產生之結構以及成份改變,可了解未來產業上之應用。 藉由濕式選擇性蝕刻結合原子力顯微鏡以及穿透式電子顯微鏡、拉曼光譜分析儀,可以徹底了解矽鍺量子點之成份分佈、表面形態、原子排列以及應力狀態。 Recently, self assembled Ge islands have attracted considerable interest for the promising applications in future optoelectronic devices compatible with Si technology. With a moderate lattice mismatch (4.2%), Ge/Si has emerged as a model system for the fabrication and investigation of nanoscale heteroepitaxy. In this thesis, with the special property of the selective wet chemical etching, the composition distribution of SiGe quantum dot can be investigated. The optical properties of SiGe quantum dot are strongly influenced by their size, shape, composition, strain condition and growth conditions. For practical applications relying on a quantum confinement, the SiGe islands usually undergo a Si capping process to be embedded in a semiconductor matrix. Moreover, the SiGe islands needs to be embedded by Si capping in order to continue next process in semiconductor industry. In this way, to utilize the change of composition and structure of the SiGe islands capped by Si can understand the application of future industry. It has been shown that selective wet etching combined with atomic force microscopy (AFM), transmission electron microscopy (TEM) and Raman spectrum can be used to obtained useful information about the isocomposition profiles in the SiGe islands.
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