摘要 光電極產氫，為一種結合太陽能與氫能此兩種極具潛力且被視為未來兩顆新星之替代能源的新研究方向，利用光觸媒與電化學原理，將光電極置於水溶液中吸收太陽能，並利用此吸收的能源將水解離變成氫氣與氧氣，之後再將解離之氫氣收集起來，應用於氫能發電，此即為光電極產氫之基本概念。 本實驗利用化學水浴法－此為一種設備簡單、製作便宜、產生廢料少且易於處理、具備大面積製備、極具經濟效益的化學製程，製備AgInS2可見光光電極薄膜，研究其材料特性，並應用於光電解水產氫。 研究結果顯示AgInS2半導體光電極在無施加偏壓下照光可得到接近 4 mA/cm2的光電流密度，而在摻雜銅之後光電流在同樣條件下，可提升至5.5 mA/cm2之電流密度。 因此，本研究應用化學水浴法此簡單製程所製備的AgInS2半導體光電極，為相當具成本優勢且光電轉換效率良好之極具潛力的材料之ㄧ。 Abstract Hydrogen energy is regarded as prosperous alternative energy in the future. Among the hydrogen production methods, photoelectrochemical method is a promising technology. Based on photocatalytic and electrochemical principles, the photoelectrode absorbs solar energy and electrolyzes water into oxygen and hydrogen ions. The hydrogen ions move in the solution to the counter electrode and recover as hydrogen gas. In our experiment, the chemical bath deposition (CBD) method is adopted to produce AgInS2 visible-light photoelectrode film. CBD is simple, cheap, easier in handling waste, and large in area deposition. The influences of working parameters, such as: electrolytic concentration, heat treating, film thickness on the performance of hydrogen production are investigated in details. Experiments show that AgInS2 photoelectrode has almost 4 mA/cm2 photocurrent density at 0 bias. After doping Cu into AgInS2 at the same conditions, photocurrent density increases to 5.5 mA/cm2. Therefore, producing hydrogen with AgInS2 photoelectrode by chemical bath deposition is proved to have low-cost, yet efficient in the photo-electron conversion.
