本論文在探討鎳、銦電鍍層對銀及銀-鈀厚膜抗遷移性之影響。純銀厚膜表面經電鍍1，2，3μm厚度鎳後，浸泡於蒸鎦水中，施以5V偏壓，進行遷移研究，結果顯示：表層經鍍鎳後之銀厚膜，具有抑制銀遷移之效果，此項抗遷移性，隨著鎳鍍層厚度由1至3μm而增加，依序為：1<2<3μm。若以試片中銀鎳組成(wt%)而言則為Ag 純銀厚膜及銀-鈀厚膜表面經電鍍1μm、2μm及3μm銦後，在蒸餾水中施以5V偏壓進行遷移研究，結果顯示︰銀及銀-鈀厚膜表面經鍍1μm厚銦後，即具良好抗遷移性，且此遷移性不受熱處理之影響。 為了解銀遷移原因，在0.01M NaOH水溶液中進行電化學陽極極化分析，配合XPS表面分析，得知鎳、銦鍍層對抗遷移性之貢獻如下：鎳及銦鍍層在厚膜表面因陽極鈍化而生成保護膜，此鈍化膜在鎳表層為NiO及Ni(OH)2及銦表層為In2O3，可以抑制下層厚膜中銀的溶解及氧化。 Resistance to electrolytic migration for the Ni- and In-deposited silver thick-film conductors in distilled water at a bias of 5V has been investigated. For Ni-deposited silver thick films, the resistance to electrolytic migration increases with increasing the thick of the nickel deposits. (i.e. 1μm<2μm<3μm). The Ni-deposited Ag conductors were heat-treated at 400°C for 1 h. The heat-treated Ni-deposited silver conductors have lower resistance to electrolytic migration in comparison with those as deposited conductors with the same nickel composition. Deposition of indium is better than deposition of nickel on silver and silver-palladium thick films to provide higher resistance to electrolytic migration. As long as a thickness of 1μm indium has been electroplated, the indium-deposited thick films are good enough to inhibit the electrolytic migration. The resistance to electrolytic migration remains efficiently even the In-deposited thick films having experienced a heat treatment at 200°C for 20min. Anodic potentiodynamic polarization for Ni- and In-deposited silver thick films in 0.01M NaOH solution has been studied to delineate the mechanism of migration resistance. It was found that the resistance of migration is due to inhibition of silver dissolution from anode. This inhibition was ascribed to oxide passivation arisen from the nickel and indium deposits. The results of ESCA analysis showed that NiO, Ni(OH)2 and In2O3 played an important role on anodic passivation.
