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    研究計畫 [164/164]

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    日期題名作者
    1993 EFFECTS OF GRATING SPACING ON THE RONCHI TEST WAN,DS; CHANG,MW
    1995 PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS CHU,CC; CHAN,YJ; YUANG,RH; CHYI,JI; LEE,CT
    1996 New types of reflecting prisms and reflecting prism assembly Lian,TS; Chang,MW
    1999 Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy Yang,CC; Wu,MC; Chang,CA; Chi,GC
    2000 Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy Yang,CC; Wu,MC; Lee,CH; Chi,GC
    2000 Optical properties in InGaN/GaN multiple quantum wells and blue LEDs Su,YK; Chi,GC; Sheu,JK
    2000 The doping process of p-type GaN films Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ
    2001 Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs Lee,CC; Wu,LW; Chi,GC
    2001 Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    2001 Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ
    2001 Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer Sheu,JK; Chi,GC; Jou,MJ
    2001 FE calculation of contour integrals in plane anisotropic elastic media with crack surface tractions Chang,JH; Wu,WH
    2001 Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice Sheu,JK; Chi,GC; Jou,MJ
    2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
    2002 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
    2002 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC
    2002 Characterization of Si implants in p-type GaN Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
    2002 Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    2002 Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
    2002 InGaN/GaN light emitting diodes activated in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    2002 InGaN/GaN tunnel-injection blue light-emitting diodes Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
    2002 Low temperature activation of Mg-doped GaN in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    2002 Making shallow traps in barium titanate inactive by reduction Huang,CY; Chang,JY
    2002 n(+)-GaN formed by Si implantation into p-GaN Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
    2002 Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK

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