本論文在研究一表面具種子層的矽晶片之銅電鑄。p型（100）矽晶片先濺鍍鉻（300nm）及銅（2000nm）為種子層後以類-LIGA製程獲得24個圖樣，作為銅電鑄之試片。 銅電鑄在焦磷酸浴中進行，電極以垂直或水平浸泡於電解液中。為增進電鑄過程中之質傳，水平配置之陰極設定在25rpm下旋轉，電解液噴流至陰極表面。本研究著重於矽晶片24個圖樣銅鍍層的均勻分布及每一個圖樣上銅鑄物的平坦與光滑。 研究顯示，垂直式電極進行電鑄僅能在一狹窄電流密度範圍（283Am-2）獲得均勻平滑銅鍍層，若以氣體進行攪拌，所得鍍層每一圖樣表面顆粒大小差異極大，電鑄均勻性不佳。 採用旋轉式陰極（轉速25轉/分）進行電鑄，結果在較大電流密度範圍（283∼848 Am-2），24個圖樣鍍層有極佳之均勻分布性，每一圖樣上銅鍍層晶粒細且平整（平均粗糙度14nm）。 若將電解液噴流於旋轉陰極表面，則電鑄之極限電流密度可以提升，擴大可用電鍍電流範圍；然而噴流對各圖樣鍍層均勻分布性及在每一圖樣中銅鍍層的平坦度並未增進。本研究並討論銅電鑄的溫度效應。 利用陰極旋轉搭配電解液噴流，可提高極限電流密度，且隨著電流密度提高，鍍層結構晶粒不太會隨著增加。 Copper electroforming on a seed-layered silicon wafer has been studied in this work. The p-type (100) silicon was sputtered with Cr (300nm) and Cu (2000nm), fabricated by LIGA-like process to obtain 24 patterns, and was ready for electroforming. The electrodeposition was carried in a pyrophosphate bath where the electrodes were immersed vertically and horizontally. The horizontal cathode was rotated and the electrolyte was injected to the cathode surface for enhancing the mass transport. The homogeneity of the copper deposit on 24 patterns, and the smoothness on each deposited pattern were most concerned. Electrodeposition conducted by stationary electrodes immersed vertically can only obtain a homogeneous flate deposit in a narrow range of current density (283Am-2). Agitation with air-bubbling is unsuitable for improving the homogeneity and flatness of the deposits. Electrodoposition conducted via a rotation cathode (with 25 rpm) leads to a homogeneous deposit in a wider range of current density (283~848Am-2). In this method, the grains of deposit on each pattern are fine and the surface is smooth enough (Ra≒14nm). The limit current density for the rotating cathode electroforming system can be promoted with the aid of electrolyte injection. However, the homogeneity of the deposit and its flatness on each pattern are unaffected. Temperature effect on the copper electroforming was also discussed.