English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65275/65275 (100%)
Visitors : 20955583      Online Users : 128
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/2155


    Title: 大尺寸晶圓之化學機械研磨實驗研究;A General Optimization for Slurry Injection During Chemical Mechanical Polishing
    Authors: 謝勝在;Sheng-Tsai Hsieh
    Contributors: 機械工程研究所
    Keywords: 研磨液;化學機械研磨;晶圓;Slurry;Chemical Mechanical Polishing;Wafer
    Date: 2002-06-19
    Issue Date: 2009-09-21 11:39:38 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 摘要 化學機械研磨簡稱CMP,是現在唯一能夠提供VLSI製程全面平坦化的技術。這項平坦化技術的原理是利用類似磨刀這種機械式研磨,配合適當的化學助劑,把晶片表面上沉積層突出的輪廓加以磨平,以提供下一層電路一個平坦的表面。化學原理與機械原理都提供平坦化的效用,本篇論文著重在機械研磨機制的討論。在晶圓與研磨墊之間的研磨液之流體行為是機械研磨的主要機制,本篇論文以一CMP流場模擬機,採用灰階度方法將CCD影像圖由影像擷取軟體處理,使用這種技術可估算出進入晶圓與研磨墊間之研磨液的量與其分布。實驗所得的灰階度與非均勻性有很高的重複性且與實際的移除率與均勻度之趨勢一致,故可以比較簡單的灰階度取代實際的移除率量測。利用這個技術,本篇論文提出大尺寸晶圓之化學機械研磨研磨液最佳化注入研究。實驗顯示12吋晶圓之研磨液最佳注入位置為IP<30%。最佳注入量在低轉速下建議使用注入量Q=100-150 ml/min,而在高轉速下建議使用Q>200 ml/min的流量。此外亦研究改變晶圓與研磨墊中心距離對灰階度與非均勻性的影響。實驗數據顯示,晶圓邊緣跨越研磨墊中心距離時,可藉著提高研磨墊轉速而達到與未跨中心相近的移除率,但是跨越中心會影響研磨液的傳遞效率。因此建議跨越中心距離Rwe<3cm有最佳的效果。 A chemical mechanical polishing model is developed In order to understand the general optimization for slurry injection position and injection rate. Slurry injection efficiency is predicted by maximum removal rate and minimum nonuniformity. We measure the mean gray scale (MGS) to replace the removal rate since the stably repeated data of MGS agrees in trend with the removal rate and it is easier measure. The characteristics of the rim of wafer crossing the center of polishing pad is also studied and we can reduce the equipment size to keep the same removal rate with a little influence on the nonuniformity by increase the rotation rate when the rim of wafer crossing the center of pad.
    Appears in Collections:[機械工程研究所] 博碩士論文

    Files in This Item:

    File SizeFormat
    0KbUnknown609View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明