摘要 隨著半導體產業技術的日新月異，半導體元件的尺寸越趨輕薄短小，使得元件的可靠性受到更嚴苛的挑戰，以往關於覆晶構裝之研究大多是關於熱應力與疲勞壽命之探討，然而隨著凸塊的尺寸變小，覆晶結構承受極大的電流密度與電場強度，使得電流集中造成的電致遷移現象成為影響覆晶可靠性的重要因素，採用不同幾何形狀的凸塊可以改變電流密度的最大值與電流集中現象，其中球形凸塊的電流容易集中在凸塊與鋁墊、銅墊的交界處，但是最大電流密度分佈的範圍較小；圓柱形凸塊之電流分佈最為均勻，而沙漏形凸塊則可以使得凸塊與鋁墊、銅墊交界處不再發生電流集中，電流集中現象與幾何形狀息息相關。 As the IC manufacturing technology improved,the electronic devices become small and light . Because the volume of the bump decreases,it suffers high current density and electrical field . The electromigration due to current crowding can not be ignored . Different bump shapes have different current density distribution and affect the current crowding position. For solving the electromigration caused by current density, investigating the relation between bump shape and current distribution is needed.
