利用微波電漿化學氣相沉積(Microwave Plasma Chemical Vapor Deposition, MPCVD)以金屬Ni來當作觸媒在基板溫度400℃下，成長出圖案化多壁奈米碳管(Multiwall Carbon Nanotube, MWCNT)。 利用IC圖案化製程和MPCVD，在Vias結構中成長出直徑為20-40nm的多壁奈米碳管，來當作積體電路內連線中的材料。 以拉曼散射光譜(Raman Spectroscopy)和場發射量測儀器(Field Emission Measurement)，來探討不同製程參數對於奈米碳管的場發射和石墨化性質影響。 Well-patterned multi-walled carbon nanotubes were grown by microwave plasma chemical vapor deposition with Ni as catalyst at 400℃. The resulting multi-walled carbon nanotubes with 20-40nm in diameter were used as interconnect material in vias by microwave plasma chemical vapor deposition and patterning process. Effects of growth parameters on the field emission and the graphitize of multi-walled carbon nanotube were analyzed by raman spectroscopy and field emission measurement.
