本研究在探討鍍銅矽晶片其電化學拋光行為，利用陽極循環極化 法(Anodic cyclic voltammograms)比較各種拋光配方在電解拋光特性 範圍內之差異性，改變氧化劑、參雜劑、黏滯劑等之種類，及改變添 加劑的比例、溶液溫度與時間等參數，來獲得最佳的電解拋光條件， 並利用陽極定電位實驗來印證結果。 以陽極循環極化法做分析，可明確定義出電解拋光的範圍(Epp~ Eport)，並藉由鈍化電流密度差值(△ic-ip)的比較，可得知在不同的鈍 化情況下對電解拋光的影響。 含甘油之磷酸具有良好拋光效果，且隨著甘油含量增加，會導致 拋光電流密度下降。拋光前後鍍銅矽晶片表面粗糙度以原子力顯微鏡 (AFM)量測，拋光效果Rmax 由拋光前92 降至拋光後13nm：Ra 由拋 光前7 降至拋光後1.2nm。 In this study, elelctrochemical polishing of Cu-coated silicon wafer was explored. Anodic cyclic voltammograms was used to compare with various electrochemical polishing conditions. For example: kind of solution(add a oxidizing、contaminating agent or a diffusion layer promoter )、solution of concentration and temperature、polishing time. Anodic potentiostatic method was applied to confirm the electropolishing results. The analysis of Anodic cyclic voltammograms could define electropolishing range (Epp ~ Eport) and the difference of current density (△ic-ip) used to compare with various condition for the effect of electropolishing. Phosphoric acid added glycerin could help electropolishing but too much glycerin lead current density go down. AFM measure the morphology of Cu-coated silicon wafer, before electropolishing the average roughness and the maximum roughness are 7nm and 92nm, but after electropolishing diminished to 1.2nm and 13nm.
