摘 要 本論文針對鋁電解電容器用高壓陽極鋁箔之基本性質分析，利用影像軟體分析電蝕後鋁箔之腐蝕組織。探討鋁箔經不同電蝕時間後表面積增加率之影響。 本實驗直接對四種不同製程與微量元素之高壓陽極鋁箔進行電化學蝕刻，改變不同E1與E2的電蝕時間參數來觀察電蝕後鋁箔之發孔與孔洞成長之形貌。接下來再輔以影像軟體分析電蝕後鋁箔之表面SEM圖與截面OM圖，求出孔洞平均大小、孔洞平均個數與孔洞截面之平均tunnel長度。利用此三項表面積增加之影響因子來建立各個與靜電容量之間的關係式。 由影像分析之實驗結果得知，平均孔洞大小、平均tunnel長度與平均孔洞數量會隨著電蝕時間的增長而增加，但是平均孔洞數量在理想電蝕範圍後反而有下降之趨勢。此趨勢下並不利於總表面積的 增加率，因此在理想電蝕範圍內所求出各個影響因子之關係式可建立出數學理論模式，其中包括C-Atotal(a、L、N)與C-t方程式。此兩項經回歸後方程式可用來對電蝕工程技術進行描述、預測與控制。 Abstract This thesis focus on the survey of aluminum foil primarily. In order to know exactly the corrosion morphology by image software analyzing etched-foils. We investigated the effects of etching morphology on surface increment. By changing etching time in E1 and E2 solution we investigated the pit morphology including the pit size, the pit number and pit length that depended on image analysis. Besides, it can also set up the relationships between the effect factors and the capacitance values. It was found that the more etching time increased pit size, tunnel length and pit number. The pit number decreased with higher etching beyond the ideal etching range. The phenomenon is not good for increasing total surface area. For this reason it can find out every effect factor under ideal etching range that setting up a mathematical model including C-Atotal (a,L,N) and C-t equations. The two models are great benefit to aluminum etching engineering for describing and projecting it.
