一維的半導體奈米材料具有獨特的物理與化學特性，引起相當廣泛的研究。其中氧化鋅(ZnO)具有很高的熱穩定性和化學穩定性，它和氮化鎵(GaN)一樣是屬於直接能隙半導體，在常溫下能帶寬度約3.37eV，而且氧化鋅的自由激子的束縛能為60meV，比氮化鎵的25meV還要來的大，因此在室溫下氧化鋅中的激子對依然可以存在，因此理論上將氧化鋅做為發光二極體材料其發光效率會比氮化鎵還要來的好。缺陷對半導體有舉足輕重的影響，而在於不同的成長條件之下缺陷所產生的原因和機制都不相同，所以，將利用不同的成長條件來研究。成長方面利用化學氣相層積法，在改變不同條件下成長氧化鋅奈米線(如催化劑種類、不同基板及奈米線的線徑大小)，並且研究成長條件對於氧化鋅奈米線的成長機制、形貌、結構及光性的影響。並且討論氧化鋅奈米線本質的成長機制及物理性質做深入探討。材料應用方面，將利用氧化鋅奈米線為主體結構，而使用銪離子作為活化劑，來進行進行紅色螢光粉的改質研究。一般而言，螢光粉的螢光波長可利用稀土類元素來調配。在元素銪方面，能階上的躍遷是從5D0的激發態到7F2的能階，而此躍遷可以輻射出610nm的紅光波段。由於紅色螢光粉之發光效率在三原色螢光粉中是最差、最難提昇，因此想利用單晶結構的氧化鋅奈米線為主體結構來提升效率。在奈米元件之製作上，將利用本校微光電實驗室已建立之研究基礎，利用微影技術製成奈米元件 (nano-device)，如發光二極體及太陽能電池。而這部份將會延續氧化鋅奈米線的成長及特性分析，利用基本性質的結果來探討元件的特性及其應用性。 Recent years, the low-dimensional nanoscale structure materials attracted much attention. Their interesting properties and potential to allow exploration of fundamental physical concepts and technological applications are the focus for all the researchers. Zinc oxide (ZnO) is an attractive candidate for ultraviolet light emission because of its wide bandgap of 3.37 eV at room temperature (RT) and its large exciton binding energy is approximately 60 meV, significantly larger than that of ZnSe (22meV) and GaN (25 meV). Such a high binding energy ensures the survival of excitons even at RT, as evidenced by optically pumped RT exciton lasing and high-temperature excitonic stimulated emission. The growth mechanism, morphology, structure, and optical properties of the ZnO nanowires were grown by chemical vapor deposition (CVD) under different growth conditions were investigated with different growth condition, such as variation substrate, growth time and w/o. catalyst. The emission wavelengths of a phosphor can be varied by changing the rare earth impurity dopants. The radioactive transition from the 5D0 excited state to the 7F7 level in Eu3+ ions is well known to produce a deep red color. In order to get more understanding of the RE ions incorporated in the ZnO host, we have extended our work to ZnO nanowires. 研究期間：9908 ~ 10007
