本論文使用氟化銨蝕刻液，以光電化學方法在n-型（100）矽單晶上，蝕刻出微米級溝槽結構。研究方式利用陽極極化法及定電位蝕刻，在氟化銨溶液中，分別就外加電壓、氟化銨溶液溫度、預蝕孔深度、試片圖案間距等參數，探討其對蝕刻之影響。 研究結果顯示，n-型（100）矽單晶在功率150W 鹵素燈照光下，氟化銨蝕刻液溫度由20，30，40增加到50℃時，2M氟化銨溶液對n-Si(100)的蝕刻孔洞寬度保持一定，而蝕孔深度由58μm增加到88μm。KOH化學預蝕刻結構底部寬度由0μm增加到33μm，蝕刻所得之結構壁厚由39μm減薄至31μm 。 預蝕刻圖形間距110μm，若改變蝕刻電位由0.1V增加到0.8V，則蝕刻所得之結構其孔壁厚度由32μm增加至90μm。外加電位0.8V，於預蝕刻圖形間距170μm~60μm試片，則間距60、80及110μm試片可以製作出孔壁筆直之溝槽結構，而間距140及170μm試片，蝕刻孔洞發生擴孔，以上現象可以由空間電荷與電場偏壓的關係來解釋。 Formation of macro-trench on n-type silicon in the ammonium fluoride solution by photo-electrochemical etching has been investigated in this work. Effect of applied voltage, the temperature of ammonium fluoride electrolyte, the depth of pre-etching and the pitch of pores were discussed in ammonium fluoride solution by dc-potentiodynamic polarization and potentiostatic etching. n-type(100) silicon under 150W illumination. The depth of etching pores increase from 58μm to 88μm when the temperature of ammonium fluoride solution increases from 20℃ to 50℃. The width of etching pores is same. The wall width of etching structure decrease 39μm to 31μm when the flat bottom of pre-etching structure by KOH increase 0μm to 33μm. For the pattern with a pitch of 110μm, the wall width of the etching structures increases from 32μm to 90μm when the etching voltage increases from 0.1V to 0.8V. For the etching conducted at 0.8V, we obtained trenches in vertical walls as the pattern with a pitch less than 110μm (e.g., 60, 80 and 110μm) but in curved walls for the pattern with a pitch higher than 110μm (e.g., 140 and 170μm). This difference in trench morphology is delineated by different distribution of the strength of electric field.
