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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/25444


    Title: 太陽電池磊晶技術開發
    Authors: 綦振瀛
    Contributors: 電機工程學系
    Keywords: 硒化鋅;氧硒化鋅;氧化鋅;透明導電層;太陽能電池;ZnSe;ZnSeO;ZnO;transparent conductive layer;solar cell;電子電機工程類
    Date: 2010-12-01
    Issue Date: 2010-06-04 11:00:27 (UTC+8)
    Publisher: 行政院原子能委員會
    Abstract: 我們將利用電漿輔助分子束磊晶系統成長氧化鋅、硒化鋅及氧硒化鋅化合物。藉由硒化鋅直接能隙與高能隙特性,並可以加入氧後的能帶彎曲的現象,將以此材料成長於傳統三層堆疊太陽能池上,成為四層堆疊太陽能電池,可以吸收從紫外延續到紅外光的能量,並提升太陽能電池之開路電壓。且於同一成長腔體內,成長氧化鋅透明導電層於太陽能電池表面,對於提升太陽能電池的效率將具有相當大的助益。We aim to grow ZnSe, ZnSeO alloys, and ZnO by plasma-assisted molecular beam epitaxy. Due to the direct band gap, and high band gap, band bap bowing effect, one can vary the ratio of Se and O to tune the band gap of this material and grow the material on triple-junction solar cell as the forth junction to assist the absorption from violet to infrared and increase the open-circuit voltage. The ZnO transparent conductive layer is deposited on the top of the solar cell for n-type electrode in the same growth chamber. Therefore, it might increase the efficiency of multi-junction solar cells. 研究期間:9901 ~ 9912
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

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