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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/2546


    Title: 微波活化對被植入於矽中之氫離子之研究;The study of microwave activation on hydrogen ions implanted with silicon
    Authors: 徐育愷;Yu-Kai Hsu
    Contributors: 機械工程研究所
    Keywords: 微波活化;離子佈植;ion implanted;microwave activation
    Date: 2006-06-06
    Issue Date: 2009-09-21 11:50:00 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 隨著絕緣層矽晶材料(SOI,Silicon-on-Insulator)及異質晶圓薄膜轉移技術的發展,帶領半導體工業進入了另一個世代。智切法(Smart-Cut Process) 是一種結合離子佈植與晶圓鍵合技術之構想的薄膜轉移製程,但其存在著高溫熱處理所帶來之熱應力、耗能源及低生產效率等缺點。一種興新的能源—微波能,期能取代傳統高溫退火製程,改善其缺失。 本研究即在探討微波活化效應對被植入於矽中之氫離子的激發作用。實驗以不同的微波時間和功率照射各種氫離子佈植劑量之矽晶圓試片,並觀察分析其之間的關係。由實驗結果發現氫離子佈植劑量為4×1016ion/㎝2之試片,在微波頻率2.45GHz及微波功率5W下照射60秒即能在表面形成微小氣泡,顯示微波確實能激發氫氣離子;而佈植劑量為5×1015ion/㎝2之試片,在高功率微波照射下亦無反應,顯示氫離子劑量須達臨界劑量,在微波照射激發下才能聚集形成氣泡。再者,微波功率愈大、微波時間愈長,氫氣離子愈容易被激發而獲得結合成氣體分子之動能,最後聚集造成氣泡破裂,甚至達到薄膜剝離的結果。 The development in Silicon-on-Insulator(SOI)materials and dissimilar materials layer transfer process have led the thin film semiconductor technology into a new era. Smart-cut process is a layer transfer process which combines three main steps: ion implantation, wafer bonding, and layer splitting. However, it still has some drawbacks such as high thermal stress, high energy consumption and low production efficiency, resulting from the thermal treatment. Therefore it is highly expected that an emerging source of energy, the microwave energy, will replace the traditional annealing process and thus solve those problems. The purpose of this paper is to study the priming excitation effect that microwave activation effect has on the hydrogen ions which were implanted into the silicon wafer. In the experiment, various silicon wafers implanted with different dosage of hydrogen ions were irradiated by microwave at different length of time and microwave power, with a view to examining the relationship between each other. The results indicated that, irradiating at 5W microwave power for 60 seconds, blisters will occur on the surface of the wafers which were implanted with 4×1016ion/㎝2 of hydrogen ions. This showed that the microwave can indeed excite hydrogen ions. On the other hand, the wafers implanted with 5×1015ion/㎝2 of ions had no reactions even when irradiated at higher microwave power. It showed that the implanted hydrogen ions have to reach a critical dosage so as to form blisters under the microwave irradiation. In addition, the higher microwave power and the longer irradiation time, the more hydrogen ions can be excited and gain the energy to form gas molecule. Finally the hydrogen ions aggregated and caused the bubbles to burst or the thin film to ablate.
    Appears in Collections:[機械工程研究所] 博碩士論文

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