English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 41634865      線上人數 : 2222
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/26365


    題名: Atmospheric-pressure plasma deposition of SiOx films for super-hydrophobic application
    作者: Yang,SH;Liu,CH;Su,CH;Chen,H
    貢獻者: 化學工程與材料工程學系
    關鍵詞: SILICON DIOXIDE FILMS;GLOW-DISCHARGE;SURFACES;NONEQUILIBRIUM;WETTABILITY;JET
    日期: 2009
    上傳時間: 2010-06-29 17:26:26 (UTC+8)
    出版者: 中央大學
    摘要: In this study, we investigate the chemical proper-ties and surface morphology of super-hydrophobic (SH) films deposited by self-assembled RF atmospheric-pressure plasma (APP) deposition system. The O-2/HMDSN (hexamethyldisilazane) and At serve as the deposition precursor and ionization gas, respectively. The effects of process parameters, including the oxygen flow rate and the nozzle-to-sample distance on the characteristics of SiOx films measured by FTIR, XPS, SEM and AFM are also discussed. It was found that the higher deposition rate was obtained at higher oxygen flow rate conditions. Consequently, the smooth surface was transformed into a rough surface with many particles when the nozzle-to-sample distance was decreased from 20 mm to 10 mm. The SH films (contact angle over 150 degrees and sliding angle below 5 degrees) were obtained when the nozzle-to-sample distance was 10 mm. A simplified deposition mechanism is proposed to explain the effect of process parameters on the films that are formed. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
    關聯: THIN SOLID FILMS
    顯示於類別:[化學工程與材料工程研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML836檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明